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| 型号： | MAX1980ETP+ |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 17/33页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR BUCK PWM 20-TQFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 60 |
| 系列： | Quick-PWM™ |
| PWM 型： | 控制器 |
| 输出数： | 1 |
| 频率 - 最大： | 550kHz |
| 占空比： | 50% |
| 电源电压： | 4.5 V ~ 5.5 V |
| 降压： | 是 |
| 升压： | 无 |
| 回扫： | 无 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 无 |
| 工作温度： | 0°C ~ 85°C |
| 封装/外壳： | 20-WQFN 裸露焊盘 |
| 包装： | 管件 |
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Quick-PWM Slave Controller with
Driver Disable for Multiphase DC-DC Converter
MOSFET Gate Drivers (DH, DL)
The DH and DL drivers are optimized for driving moder-
I PEAK
I LOAD
I LIMIT
ately sized, high-side and larger, low-side power
MOSFETs. This is consistent with the low duty factor
seen in the notebook CPU environment, where a large
V IN - V OUT differential exists. An adaptive dead-time cir-
cuit monitors the DL output and prevents the high-side
FET from turning on until DL is fully off. There must be a
low-resistance, low-inductance path from the DL driver
to the MOSFET gate in order for the adaptive dead-time
circuit to work properly. Otherwise, the sense circuitry in
I LIMIT(VALLEY) = I LOAD(MAX)
(
2 - LIR
2 η
)
the MAX1980 will interpret the MOSFET gate as “ off ”
while there is actually charge still left on the gate. Use
very short, wide traces (50mils to 100mils wide if the
0
TIME
Figure 3. “ Valley ” Current-Limit Threshold Point
guarantee full-load operation under worst-case condi-
tions. Furthermore, the inaccurate current limit mandates
the use of MOSFETs and inductors with excessively high
current and power dissipation ratings.
The slave includes a precision current-limit comparator
that supplements the master ’ s current-limit circuitry.
The MAX1980 uses CM+ and CM- to differentially
sense the master ’ s inductor current across a current-
sense resistor, providing a more accurate current limit.
When the master ’ s current-sense voltage exceeds the
current limit set by ILIM in the slave (see the Dual-Mode
ILIM Input section), the open-drain current-limit com-
parator pulls LIMIT low (Figure 2). Once the master trig-
MOSFET is 1 inch from the device). The dead time at
the other edge (DH turning off) is determined by a fixed
35ns internal delay.
The internal pulldown transistor that drives DL low is
robust, with a 0.4 ? (typ) on-resistance. This helps pre-
vent DL from being pulled up during the fast rise-time
of the LX node, due to capacitive coupling from the
drain to the gate of the low-side synchronous-rectifier
MOSFET. However, for high-current applications, some
combinations of high- and low-side FETs may cause
excessive gate-drain coupling, leading to poor efficien-
cy, EMI, and shoot-through currents. This is often reme-
died by adding a resistor less than 5 ? in series with
BST, which increases the turn-on time of the high-side
FET without degrading the turn-off time (Figure 4).
gers the current limit, a pulse-width-modulated output
signal appears at LIMIT. This signal is filtered and used
to adjust the master ’ s current-limit threshold.
V+
C BYP
INPUT
(V IN )
High-Side Gate Driver Supply (BST)
The gate drive voltage for the high-side, N-channel
MOSFET is generated by the flying capacitor boost cir-
BST
(R BST )*
D BST
cuit (Figure 4). The capacitor between BST and LX is
alternately charged from the external 5V bias supply
C BST
(V DD ) and placed in parallel with the high-side MOS-
FET ’ s gate-source terminals.
On startup, the synchronous rectifier (low-side MOS-
FET) forces LX to ground and charges the boost
capacitor to 5V. On the second half of each cycle, the
switch-mode power supply turns on the high-side MOS-
FET by closing an internal switch between BST and DH.
MAX1980
DH
LX
N H
L
This provides the necessary gate-to-source voltage to
turn on the high-side switch, an action that boosts the
5V gate drive signal above the system ’ s main supply
voltage (V+).
( )*OPTIONAL—THE RESISTOR REDUCES
THE SWITCHING-NODE RISE TIME.
Figure 4. High-Side Gate Driver Boost Circuitry
______________________________________________________________________________________
17
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MAX1980ETP+ | 功能描述:DC/DC 开关控制器 PWM Slave Controller w/Driver Disable RoHS:否 制造商:Texas Instruments 输入电压:6 V to 100 V 开关频率: 输出电压:1.215 V to 80 V 输出电流:3.5 A 输出端数量:1 最大工作温度:+ 125 C 安装风格: 封装 / 箱体:CPAK |
| MAX1980ETP+T | 功能描述:DC/DC 开关控制器 PWM Slave Controller w/Driver Disable RoHS:否 制造商:Texas Instruments 输入电压:6 V to 100 V 开关频率: 输出电压:1.215 V to 80 V 输出电流:3.5 A 输出端数量:1 最大工作温度:+ 125 C 安装风格: 封装 / 箱体:CPAK |
| MAX1980ETP+TG075 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Maxim Integrated Products 功能描述: |
| MAX1980ETP-T | 功能描述:DC/DC 开关控制器 RoHS:否 制造商:Texas Instruments 输入电压:6 V to 100 V 开关频率: 输出电压:1.215 V to 80 V 输出电流:3.5 A 输出端数量:1 最大工作温度:+ 125 C 安装风格: 封装 / 箱体:CPAK |
| MAX1980ETP-TG075 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Maxim Integrated Products 功能描述: |
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