参数资料
型号: MAX4940BETN+T
厂商: Maxim Integrated Products
文件页数: 11/18页
文件大小: 0K
描述: IC DGTL PULSER HI-VOLT 56TQFN
标准包装: 2,500
应用: 医疗用超声波成像,声纳
电源电压: 2.37 V ~ 6 V
工作温度: 0°C ~ 70°C
安装类型: *
封装/外壳: *
供应商设备封装: *
包装: *
Dual/Quad, Unipolar/Bipolar,
High-Voltage Digital Pulsers
Active Clamps
The MAX4940/MAX4940A feature an integrated active
clamp circuit to improve pulse quality and reduce 2nd
harmonic distortion. The clamp circuit consists of an
n-channel (DC-coupled) and a p-channel (DC-coupled)
high-voltage FETs that are switched on or off by the logic
clamp input (CLP_).
The MAX4940/MAX4940A feature protected clamp devic-
es, allowing the clamp circuit to be used in bipolar pulsing
circuits (see Figures 3 and 4). A diode in series with the
OUT_ output prevents the body diode of the low-side FET
from turning on when a voltage lower than GND is pres-
ent. Another diode in series with the OUT_ output prevents
the body diode of the high-side FET from turning on when
a voltage higher than ground is present. The MAX4940/
MAX4940A have an active clamp on all outputs.
For the MAX4940 only, the user can connect the active
clamp input (CLP_) to a logic-high voltage and drive
only the INP_ and INN_ inputs to minimize the number of
signals used to drive the device. In this case, whenever
both the INP_ and INN_ inputs are low and the CLP_
input is high, the active clamp circuit pulls the output to
GND (see the Truth Tables section for more information).
Integrated Blocking Diodes
(MAX4940A Only)
The high-voltage OUT2A/OUT2B outputs of the
MAX4940A feature integrated blocking diodes that allow
the user to implement multilevel pulsing by connect-
ing the outputs of multiple pulser channels in parallel.
Internal diodes in series with the OUT2A and OUT2B
outputs prevent the body diode of the high-side and low-
side FETs from switching on when a voltage greater than
V NN2 or V PP2 is present on the output (see Figure 4).
Thermal Protection
A thermal shutdown circuit with a typical threshold of
+155 N C prevents damage due to excessive power dis-
sipation. When the junction temperature exceeds T J =
+155 N C, all outputs are disabled. Normal operation typi-
cally resumes after the IC’s junction temperature drops
below +130 N C.
Applications Information
AC-Coupling Capacitor Selection
The value of all AC-coupling capacitors (between C DP_
and C GP_ , and between C DN_ and C GN_ ) should be
between 1nF to 10nF. The voltage rating of the capacitor
should be greater than V PP_ and V NN_ . The capacitors
should be placed as close as possible to the device.
Power Dissipation
The power dissipation of the MAX4940/MAX4940A con-
sists of three major components caused by the current
consumption from V CC , V PP_ , and V NN_ . The sum of
these components (P VCC , P VPP_ , and P VNN_ ) must be
kept below the maximum power-dissipation limit. See
the Typical Operating Characteristics section for more
information on typical supply currents versus switching
frequencies.
The device consumes most of the supply current from
V CC supply to charge and discharge internal nodes
such as the gate capacitance of the high-side FET (C P )
and the low-side FET (C N ). Neglecting the small quies-
cent supply current and a small amount of current used
to charge and discharge the capacitances at the internal
gate clamp FETs, the power consumption can be esti-
mated as follows:
? ? ? ?
P VCC = ? ( C N × V CC 2 × f IN ) + ( C P × V CC 2 × f IN ) ? × ( BRF × BTD )
f IN = f INN_ + f INP_
where f INN_ and f INP_ are the switching frequency of
the inputs INN_, INP_, respectively, and where BRF is
the burst response frequency, and BTD is the burst time
duration. The typical values of the gate capacitances are
C N = 1.2 F F, C P = 0.4 F F.
See the Typical Operating Characteristics for V PP_ and
V NN_ power consumption.
Power Supplies and Bypassing
The MAX4940/MAX4940A operate from independent
supply voltage sets (only V DD , V CC , and V EE are com-
mon to all channels). V PP1 /V NN1 supply two channels
and V PP2 /V NN2 supply the other two channels. The logic
input circuit operates from a +2.37V to +6V single sup-
ply (V DD ). The level-shift driver dual supplies, V CC /V EE
operate from Q 4.75V to Q 12.6V.
The V PP_ /V NN_ high-side and low-side supplies are
driven from a single positive supply up to +220V, from a
single negative supply up to -220V, or from Q 110V dual
supplies. Either V PP_ or V NN_ can be set at 0. Bypass
each supply input to ground with a 0.1 F F capacitor as
close as possible to the device.
Depending on the applications, additional bypassing may
be needed to maintain the input of both V NN_ and V PP_
stable during output transitions. For example, with C OUT
= 100pF and R OUT = 100 I load, the use of an additional
10 F F (typ) electrolytic capacitor is recommended.
______________________________________________________________________________________
11
相关PDF资料
PDF描述
MAX4971EWC+T IC OVERVOLTAGE PROT CTRLR 12WLP
MAX4981ETA+T IC OVERVOLTAGE PROT CTRLR 8TDFN
MAX5003ESE+ IC REG CTRLR FLYBK ISO VM 16SOIC
MAX5005BCUB+ IC REG USB LDO 150MA 10-UMAX
MAX5008CUB+T IC CHARGE PUMP USB 5V 10-UMAX
相关代理商/技术参数
参数描述
MAX4940CTN+ 功能描述:功率驱动器IC Unipolar/Bipolar Digital Pulser RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
MAX4940CTN+T 功能描述:功率驱动器IC Unipolar/Bipolar Digital Pulser RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
MAX4940EVKIT+ 功能描述:电源管理IC开发工具 Maxim Evaluation Kit RoHS:否 制造商:Maxim Integrated 产品:Evaluation Kits 类型:Battery Management 工具用于评估:MAX17710GB 输入电压: 输出电压:1.8 V
MAX4940MB+ 功能描述:功率驱动器IC MAX4940 Ev Kit Part II RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
MAX4943ELA+ 制造商:Rochester Electronics LLC 功能描述: 制造商:Maxim Integrated Products 功能描述: