参数资料
型号: MAX5061EUE+T
厂商: Maxim Integrated Products
文件页数: 20/31页
文件大小: 0K
描述: IC REG CTRLR BUCK PWM CM 16TSSOP
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 2,500
PWM 型: 电流模式
输出数: 1
频率 - 最大: 1.5MHz
占空比: 90%
电源电压: 4.75 V ~ 28 V
降压:
升压:
回扫:
反相:
倍增器:
除法器:
Cuk:
隔离:
工作温度: -40°C ~ 85°C
封装/外壳: 16-TSSOP(0.173",4.40mm)裸露焊盘
包装: 带卷 (TR)
0.6V to 5.5V Output, Parallelable,
Average-Current-Mode DC-DC Controllers
where ? I L = peak-to-peak inductor current. Choose
RC2 = 10 ? , V CC = 5.1V, and R SENSE is a current-
sense resistor. Note that the current limit of MAX5061 is
V OUT ( NL ) = [( REF + REF
) × R H ] + V REF
reduced by 3mV / R SENSE .
The no-load output voltage depends on the R H , R F ,
V REF (0.6V) and the fixed DC bias voltage at CSP -
CSN. The following equation assumes a 3mV bias volt-
age at CSP - CSN.
V V ? 0 . 1
R L R F
Adaptive Voltage Positioning
V CNTR +
? V OUT /2
V CNTR
V CNTR -
? V OUT /2
Powering new-generation processors requires new
techniques to reduce cost, size, and power dissipation.
Voltage positioning reduces the total number of output
NO LOAD
1/2 LOAD
LOAD (A)
FULL LOAD
capacitors to meet a given transient response require-
ment. Setting the no-load output voltage slightly higher
than the output voltage during nominally loaded condi-
tions allows a larger downward-voltage excursion when
the output current suddenly increases. Regulating at a
lower output voltage under a heavy load allows a larger
upward-voltage excursion when the output current sud-
denly decreases. Allowing a larger voltage-step excur-
sion reduces the required number of output capacitors
or allows for the use of higher ESR capacitors.
Voltage positioning may require the output to regulate
away from a center value. Define the center value as
the voltage where the output drops ( ? V OUT /2) at one
half the maximum output current (Figure 7).
Set the voltage-positioning window ( ? V OUT ) using the
resistive feedback of the voltage-error amplifier (VEA).
Use the following equations to calculate the voltage-
positioning window (Figure 5):
MAX5060:
Figure 7. Defining the Voltage-Positioning Window
MOSFET Gate Drivers (DH_, DL_)
The high-side (DH) and low-side (DL) drivers drive the
gates of external n-channel MOSFETs (Figures 1 and 2).
The drivers’ 4A peak sink- and source-current capability
provides ample drive for the fast rise and fall times of the
switching MOSFETs. Faster rise and fall times result in
reduced cross-conduction losses. For modern CPU volt-
age-regulating module applications, where the duty
cycle is less than 50%, choose high-side MOSFETs (Q1)
with a moderate R DS(ON) and a very low gate charge.
Choose low-side MOSFETs (Q2) with very low R DS(ON)
and moderate gate charge. Size the high-side and low-
side MOSFETs to handle the peak and RMS currents
during overload conditions.
The driver block also includes a logic circuit that provides
× H L
G C =
MAX5061:
? V OUT =
I OUT × R IN R + R
G C × R F R L
0 . 0289
R S
an adaptive nonoverlap time to prevent shoot-through
currents during transition. The typical nonoverlap time is
35ns between the high-side and low-side MOSFETs.
BST
The MAX5060 uses V DD to power the low- and high-side
MOSFET drivers. The low- and high-side drivers in the
MAX5061 are powered from V CC . The high-side driver
? V OUT = OUT H
I x R
G c x R F
R IN and R F are the input and feedback resistors of
VEA. G C is the current-loop transconductance and R S
is the current-sense resistor.
derives its power through a bootstrap capacitor and V DD
supplies power internally to the low-side driver. Connect a
0.47μF low-ESR ceramic capacitor between BST and LX.
Connect a Schottky rectifier from BST to V DD on the
MAX5060, or to V CC on the MAX5061. Reduce the PC
board area formed by the boost capacitor and rectifier.
20
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