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参数资料
| 型号： | MAX5930AEEG+ |
| 厂商： | Maxim Integrated |
| 文件页数： | 20/23页 |
| 文件大小： | 331K |
| 描述： | IC HOT SWAP CTLR PWR SEQ 24QSOP |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 50 |
| 类型： | 热交换控制器 |
| 应用： | 通用 |
| 内部开关： | 无 |
| 电源电压： | 1 V ~ 15 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 24-SSOP（0.154"，3.90mm 宽） |
| 供应商设备封装： | 24-QSOP |
| 包装： | 管件 |
MOSFET Thermal Considerations
During normal operation, the external MOSFETs dissi-
pate little power. The MOSFET R
DS(ON)
is low when the
MOSFET is fully enhanced. The power dissipated in nor-
mal operation is P
D
= I
LOAD
2
x R
DS(ON)
. The most
power dissipation occurs during the turn-on and turn-off
transients when the MOSFETs are in their linear regions.
By taking into consideration the worst-case scenario of a
continuous short-circuit fault, consider these two cases:
1) The single turn-on with the device latched after a
fault: MAX5930A/MAX5931A/MAX5931B (LATCH =
high or unconnected).
2) The continuous autoretry after a fault: MAX5930A/
MAX5931A/MAX5931B (LATCH = low).
MOSFET manufacturers typically include the package
thermal resistance from junction to ambient (R
窲A
) and
thermal resistance from junction to case (R
窲C
), which
determine the startup time and the retry duty cycle (d =
t
START
/(t
START
+ t
RETRY
). Calculate the required tran-
sient thermal resistance with the following equation:
where I
START
= V
SU,TH
/R
SENSE
.
Z
T
T
V
I
JA MAX
JMAX
A
IN
START
?nbsp (
)
d
?/DIV>
Low-Voltage, Triple, Hot-Swap Controllers/
Power Sequencers/Voltage Trackers
20 ______________________________________________________________________________________
INY
GATEY
INZ
GATEZ
Q1
R
SENSEY
SENSEY
R
SENSEZ
SENSEZ
Q2
C
BOARDZ
OUTY
C
BOARDY
OUTZ
V
Y
C
1
R
1
V
EN
V
Z
ON
OFF
GND
ON
GND
V
ONY, TH
V
ONZ, TH
t
DELAY
V
EN
t
1
= -R
1
C
1
ln( )
V
EN
- V
ONY, TH
V
EN
V
ON
V
Y
V
Z
t
0
t
1
t
2
t
2
= -R
1
C
1
ln( )
V
EN
- V
ONZ, TH
V
EN
t
DELAY
= -R
1
C
1
ln( )
V
EN
- V
ONY, TH
V
EN
- V
ONZ, TH
MAX5930A
MAX5931A
MAX5931B
Figure 11. Power Sequencing: Channel Z Turns On t
DELAY
After Channel Y
相关PDF资料 |
PDF描述 |
|---|---|
| MAX5932ESA+T | IC HOT-SWAP CONTROLLER 8-SOIC |
| MAX5933EESA+ | IC HOT-SWAP CONTROLLER 8-SOIC |
| MAX5934EEE+ | IC HOT-SWAP CONTROLLER 16-QSOP |
| MAX5935EAX+ | IC CTRLR POWER QUAD 36-SSOP |
| MAX5937LCESA+ | IC HOT-SWAP CTRLR -48V 8-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MAX5930AEEG+ | 功能描述:热插拔功率分布 Triple Hot-Swap Controller RoHS:否 制造商:Texas Instruments 产品:Controllers & Switches 电流限制: 电源电压-最大:7 V 电源电压-最小:- 0.3 V 工作温度范围: 功率耗散: 安装风格:SMD/SMT 封装 / 箱体:MSOP-8 封装:Tube |
| MAX5930AEEG+T | 功能描述:热插拔功率分布 Triple Hot-Swap Controller RoHS:否 制造商:Texas Instruments 产品:Controllers & Switches 电流限制: 电源电压-最大:7 V 电源电压-最小:- 0.3 V 工作温度范围: 功率耗散: 安装风格:SMD/SMT 封装 / 箱体:MSOP-8 封装:Tube |
| MAX5930EEG | 功能描述:热插拔功率分布 RoHS:否 制造商:Texas Instruments 产品:Controllers & Switches 电流限制: 电源电压-最大:7 V 电源电压-最小:- 0.3 V 工作温度范围: 功率耗散: 安装风格:SMD/SMT 封装 / 箱体:MSOP-8 封装:Tube |
| MAX5930EEG+ | 功能描述:热插拔功率分布 Integrated Circuits (ICs) RoHS:否 制造商:Texas Instruments 产品:Controllers & Switches 电流限制: 电源电压-最大:7 V 电源电压-最小:- 0.3 V 工作温度范围: 功率耗散: 安装风格:SMD/SMT 封装 / 箱体:MSOP-8 封装:Tube |
| MAX5930EEG+T | 功能描述:热插拔功率分布 Integrated Circuits (ICs) RoHS:否 制造商:Texas Instruments 产品:Controllers & Switches 电流限制: 电源电压-最大:7 V 电源电压-最小:- 0.3 V 工作温度范围: 功率耗散: 安装风格:SMD/SMT 封装 / 箱体:MSOP-8 封装:Tube |
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