参数资料
型号: MAX669EUB+T
厂商: MAXIM INTEGRATED PRODUCTS INC
元件分类: 稳压器
英文描述: 1.8V to 28V Input, PWM Step-Up Controllers in µMAX
中文描述: SWITCHING CONTROLLER, 575 kHz SWITCHING FREQ-MAX, PDSO10
封装: COMPACT, UMAX-10
文件页数: 6/18页
文件大小: 289K
代理商: MAX669EUB+T
MAX668/MAX669
given output ripple. An inductance value larger than
LIDEAL may also be used, but output-filter capacitance
must be increased by the same proportion that L has to
LIDEAL. See the Capacitor Selection section for more
information on determining output filter values.
Due the MAX668/MAX669’s high switching frequencies,
inductors with a ferrite core or equivalent are recom-
mended. Powdered iron cores are
not recommended
due to their high losses at frequencies over 50kHz.
Determining Peak Inductor Current
The peak inductor current required for a particular out-
put is:
ILPEAK = ILDC + (ILPP / 2)
where ILDC is the average DC input current and ILPP is
the inductor peak-to-peak ripple current. The ILDC and
ILPP terms are determined as follows:
where VD is the forward voltage drop across the
Schottky rectifier diode (D1), and VSW is the drop
across the external FET, when on.
where L is the inductor value. The saturation rating of
the selected inductor should meet or exceed the calcu-
lated value for ILPEAK, although most coil types can be
operated up to 20% over their saturation rating without
difficulty. In addition to the saturation criteria, the induc-
tor should have as low a series resistance as possible.
For continuous inductor current, the power loss in the
inductor resistance, PLR, is approximated by:
PLR (IOUT x VOUT / VIN)2 x RL
where RL is the inductor series resistance.
Once the peak inductor current is selected, the current-
sense resistor (RCS) is determined by:
RCS = 85mV / ILPEAK
For high peak inductor currents (>1A), Kelvin sensing
connections should be used to connect CS+ and
PGND to RCS. PGND and GND should be tied together
at the ground side of RCS.
Power MOSFET Selection
The MAX668/MAX669 drive a wide variety of N-channel
power MOSFETs (NFETs). Since LDO limits the EXT
output gate drive to no more than 5V, a logic-level
NFET is required. Best performance, especially at low
input voltages (below 5V), is achieved with low-thresh-
old NFETs that specify on-resistance with a gate-
source voltage (VGS) of 2.7V or less. When selecting an
NFET, key parameters can include:
1) Total gate charge (Qg)
2) Reverse transfer capacitance or charge (CRSS)
3) On-resistance (RDS(ON))
4) Maximum drain-to-source voltage (VDS(MAX))
5) Minimum threshold voltage (VTH(MIN))
At high switching rates, dynamic characteristics (para-
meters 1 and 2 above) that predict switching losses
may have more impact on efficiency than RDS(ON),
which predicts DC losses. Qg includes all capacitances
associated with charging the gate. In addition, this
parameter helps predict the current needed to drive the
gate at the selected operating frequency. The continu-
ous LDO current for the FET gate is:
IGATE = Qg x fOSC
For example, the MMFT3055L has a typical Qg of 7nC
(at VGS = 5V); therefore, the IGATE current at 500kHz is
3.5mA. Use the FET manufacturer’s
typical value for Qg
in the above equation, since a maximum value (if sup-
plied) is usually too conservative to be of use in esti-
mating IGATE.
Diode Selection
The MAX668/MAX669’s high switching frequency
demands a high-speed rectifier. Schottky diodes are
recommended for most applications because of their
fast recovery time and low forward voltage. Ensure that
the diode’s average current rating is adequate using
the diode manufacturer’s data, or approximate it with
the following formula:
Also, the diode reverse breakdown voltage must
exceed VOUT. For high output voltages (50V or above),
Schottky diodes may not be practical because of this
voltage requirement. In these cases, use a high-speed
silicon rectifier with adequate reverse voltage.
Capacitor Selection
Output Filter Capacitor
The minimum output filter capacitance that ensures sta-
bility is:
where VIN(MIN) is the minimum expected input voltage.
Typically COUT(MIN), though sufficient for stability, will
C
(7.5V x L / L
)
(2 R
x V
x f
)
OUT(MIN)
IDEAL
CS
IN(MIN)
OSC
=
π
II
I- I
3
DIODE
OUT
LPEAK
OUT
=+
1.8V to 28V Input, PWM Step-Up
Controllers in MAX
14
______________________________________________________________________________________
I
=
I
(V
+ V
(V
– V
LDC
OUT
D
IN
SW
)
I
=
(V
– V
) (V
+ V
– V )
L x f
(V
+ V )
LPP
IN
SW
OUT
D
IN
OSC
OUT
D
相关PDF资料
PDF描述
MAX6690MEE+T 2°C Accurate Remote/Local Temperature Sensor with SMBus Serial Interface
MAX6692MSA+T Precision SMBus-Compatible Remote/Local Temperature Sensors with Overtemperature Alarms
MAX6692MUA+ Precision SMBus-Compatible Remote/Local Temperature Sensors with Overtemperature Alarms
MAX6692MUA+T Precision SMBus-Compatible Remote/Local Temperature Sensors with Overtemperature Alarms
MAX6695AUB+ Dual Remote/Local Temperature Sensors with SMBus Serial Interface
相关代理商/技术参数
参数描述
MAX6700UT 制造商:Maxim Integrated Products 功能描述:LOW-VOLTAGE HIGH-ACCURACY TRIPLE - Rail/Tube 制造商:Rochester Electronics LLC 功能描述:
MAX6700UT+ 制造商:Maxim Integrated Products 功能描述:MAXIM MAX6700UT+ PROCESSOR SUPERVISORS - Tape and Reel 制造商:Maxim Integrated Products 功能描述:Maxim MAX6700UT+ Processor Supervisors 制造商:Maxim Integrated Products 功能描述:uP supervisory circuits, MAX6700UT+
MAX6700UT+T 功能描述:监控电路 Triple uPower Supervisor RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟(典型值):10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel
MAX6700UT-T 功能描述:监控电路 RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟(典型值):10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel
MAX6701ALKA 制造商:Maxim Integrated Products 功能描述:- Rail/Tube