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参数资料
| 型号： | MAX669EUB/V+T |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 10/18页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR PWM HYBRID 10-UMAX |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| PWM 型： | 电流模式，混合 |
| 输出数： | 1 |
| 频率 - 最大： | 575kHz |
| 占空比： | 94% |
| 电源电压： | 1.8 V ~ 28 V |
| 降压： | 无 |
| 升压： | 是 |
| 回扫： | 是 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 是 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 10-TFSOP，10-MSOP（0.118"，3.00mm 宽） |
| 包装： | 带卷 (TR) |
MAX668/MAX669
1.8V to 28V Input, PWM Step-Up
Controllers in μMAX
V IN = 1.8V to 12V
C1
L1
C4
1
LDO
MAX669
EXT
CS+
8
6
N1
D1
C5
C6
C8
V OUT = 12V @ 0.5A
C2
9
V+
7
R1
R2
C3
10 SYNC/
SHDN
4
REF
2
FREQ
PGND
FB
GND
5
3
C7
R3
R4
Figure 2. MAX669 High-Voltage Bootstrapped Configuration
V IN = 1.8V to 5V
C1
68 μ F
10V
L1
4.7 μ H
C2
1 μ F
C3
0.22 μ F
1
LDO
9
V CC
10 SYNC/
SHDN
4
REF
2
FREQ
MAX669
EXT
CS+
PGND
FB
GND
8
6
7
5
3
R1
0.02 ?
N1 D1
MBRS340T3
FDS6680
IRF7401
C4
68 μ F
10V
C7
220pF
C5
68 μ F
10V
R2
75k
1%
R3
24.9k
1%
C6
0.1 μ F
V OUT = 5V @ 1A
R4
100k
1%
Figure 3. MAX669 Low-Voltage Bootstrapped Configuration
Bootstrapped Operation
With bootstrapped operation, the IC is powered from
the circuit output (V OUT ). This improves efficiency
when the input voltage is low, since EXT drives the FET
with a higher gate voltage than would be available from
the low-voltage input. Higher gate voltage reduces the
FET on-resistance, increasing efficiency. Other (unde-
sirable) characteristics of bootstrapped operation are
increased IC operating power (since it has a higher
operating voltage) and reduced ability to start up with
high load current at low input voltages. If the input volt-
10
age range extends below 2.7V, then bootstrapped
operation with the MAX669 is the only option.
With V CC connected to V OUT , as in Figure 2, EXT volt-
age swing is 5V when V CC is 5.2V or more, and V CC -
0.2V when V CC is less than 5.2V. If the output voltage
does not exceed 5.5V, the on-chip regulator can be
disabled by connecting V CC to LDO (Figure 3). This
eliminates the LDO forward drop and supplies maxi-
mum gate drive to the external FET.
Maxim Integrated
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