参数资料
型号: MAX669EUB/V+T
厂商: Maxim Integrated Products
文件页数: 16/18页
文件大小: 0K
描述: IC REG CTRLR PWM HYBRID 10-UMAX
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 2,500
PWM 型: 电流模式,混合
输出数: 1
频率 - 最大: 575kHz
占空比: 94%
电源电压: 1.8 V ~ 28 V
降压:
升压:
回扫:
反相:
倍增器:
除法器:
Cuk:
隔离:
工作温度: -40°C ~ 85°C
封装/外壳: 10-TFSOP,10-MSOP(0.118",3.00mm 宽)
包装: 带卷 (TR)
MAX668/MAX669
1.8V to 28V Input, PWM Step-Up
Controllers in μMAX
larger or smaller than the output voltage, such as when
converting four NiMH, NiCd, or Alkaline cells to a 5V
output. The SEPIC configuration is often a good choice
for combined step-up/step-down applications.
The N-channel MOSFET (Q1) must be selected to with-
stand a drain-to-source voltage (V DS ) greater than the
sum of the input and output voltages. The coupling
capacitor (C2) must be a low-ESR type to achieve max-
imum efficiency. C2 must also be able to handle high
ripple currents; ordinary tantalum capacitors should not
be used for high-current designs.
The circuit in Figure 6 provides greater than 1A output
current at 5V when operating with an input voltage from
3V to 25V. Efficiency will typically be between 70% and
Isolated +5V to +5V Power Supply
The circuit of Figure 7 provides a 5V isolated output at
400mA from a 5V input power supply. Transformer T1
provides electrical isolation for the forward path of the
converter, while the TLV431 shunt regulator and
MOC211 opto-isolator provide an isolated feedback
error voltage for the converter. The output voltage is set
by resistors R2 and R3 such that the mid-point of the
divider is 1.24V (threshold of TLV431). Output voltage
can be adjusted from 1.24V to 6V by selecting the
proper ratio for R2 and R3. For output voltages greater
than 6V, substitute the TL431 for the TLV431, and use
2.5V as the voltage at the midpoint of the voltage-
divider.
85%, depending upon the input voltage and output cur-
rent.
V IN
3V to 25V
22 μ F x 3
@ 35V
4.9 μ H L1
CTX5-4
D1
9
10
40V
V OUT
1
VCC
LDO
SHDN
C2
10 μ F @ 35V
C3
5V @ 1A
1 μ F
R3
2
4
FREQ
REF
MAX668
EXT
8
Q1
30V
FDS6680
68 μ F x 3
100k
0.22 μ F
5
FB
GND
CS+
PGND
6
R4
0.02 ?
R1
75k
3
7
C4
R2
D1: MBR5340T3, 3A, 40V SCHOTTKY DIODE
R4: WSL-2512-R020F, 0.02 ?
C3: AVX TPSZ686M020R0150, 68 μ F, 150m ? ESR
Figure 6. MAX668 in SEPIC Configuration
16
520pF
25k
Maxim Integrated
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