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参数资料
| 型号： | MAX8554EEE+T |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 22/24页 |
| 文件大小： | 0K |
| 描述： | IC CNTRLR BUCK PWM 16-QSOP |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 系列： | Quick-PWM™ |
| 应用： | 控制器，DDR，DDR2 |
| 输入电压： | 4.5 V ~ 28 V |
| 输出数： | 1 |
| 输出电压： | 0.6 V ~ 3.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-SSOP（0.154"，3.90mm 宽） |
| 供应商设备封装： | 16-QSOP |
| 包装： | 带卷 (TR) |
4.5V to 28V Input, Synchronous PWM Buck Controllers
for DDR Termination and Point-of-Load Applications
P HSCC = × ( I LOAD )
V OUT
V IN
2
× R DS ( ON )
Control IC Power Dissipation
Power dissipation in the MAX8553/MAX8554 IC is pri-
marily due to the on-chip MOSFETs’ gate drivers (DH
and DL). This power dissipation depends on the gate
Use R DS(ON) at T J(MAX) :
charge of the external MOSFETs used. Power dissipa-
tion in the MAX8553 also depends on the VTTR load
P HSSW = V IN × I LOAD × f S ×
Q GS + Q GD
I GATE
current (I VTTR ). Use the following equation to calculate
the power dissipation:
where I GATE is the average DH driver output current
determined by:
P D = ( V V + ) × [ f S × ( Q GH + Q GL ) + I VTTR
]
I GATE =
2 . 5 V
R DH + R GATE
where Q GH and Q GL are the total gate charge of the
high-side and low-side MOSFETs, respectively. Select
the switching frequency and V V+ correctly to ensure
where R DH is the high-side MOSFET driver’s on-resis-
tance (1.4 ? typ) and R GATE is the internal gate resis-
tance of the MOSFET (~2 ? ):
the power dissipation does not exceed the package
power-dissipation requirement.
Applications Information
P HSDR = Q G × V GS × f S ×
R GATE
R GATE + R DH
PC Board Layout
A properly designed PC board layout is important in
any switching regulator. The switching power stage
where V GS = V VL = 5V.
When the MAX8553 is sinking current, the high-side
MOSFET operates as a zero-voltage switch and the
low-side MOSFETs operate as a nonzero-voltage
switch.
In addition to the losses above, allow about 20% more
for additional losses due to MOSFET output capaci-
tances and low-side MOSFET body-diode reverse
recovery charge dissipated in the high-side MOSFET
that is not well defined in the MOSFET data sheet. Refer
to the MOSFET data sheet for thermal-resistance speci-
fications to calculate the PC board area needed to
maintain the desired maximum operating junction tem-
perature with the above calculated power dissipations.
To reduce EMI caused by switching noise, add a 0.1μF
ceramic capacitor from the high-side switch drain to
the low-side switch source, or add resistors in series
with DH and DL to slow down the switching transitions.
Adding series resistors increases the power dissipation
of the MOSFET, so ensure that this does not overheat
the MOSFET.
requires particular attention. If possible, mount all the
power components on the top-side of the board with
their ground terminals flush against one another. Follow
these guidelines for good PC board layout:
1) Keep the high-current paths short, especially at the
ground terminals. This practice is essential for sta-
ble, low-jitter operation.
2) Connect GND and PGND together at a single point.
3) Keep the power traces and load connections short.
This practice is essential for high efficiency. The use
of thick copper PC boards (2oz vs. 1oz) can notice-
ably enhance full-load efficiency. Correctly routing
PC board traces is a difficult task that must be
approached in terms of fractions of centimeters,
where a single m ? of excess trace resistance caus-
es a measurable efficiency penalty.
4) LX and PGND connections to the low-side MOSFET
for current limiting must be made using Kelvin-
sense connections in order to guarantee the cur-
rent-limit accuracy. With 8-pin SO MOSFETs, this
can be done by routing power to the MOSFETs from
22
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相关代理商/技术参数 |
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| MAX8554EVKIT | 功能描述:电流型 PWM 控制器 Evaluation Kit for the MAX8553 MAX8554 RoHS:否 制造商:Texas Instruments 开关频率:27 KHz 上升时间: 下降时间: 工作电源电压:6 V to 15 V 工作电源电流:1.5 mA 输出端数量:1 最大工作温度:+ 105 C 安装风格:SMD/SMT 封装 / 箱体:TSSOP-14 |
| MAX8555AETB | 制造商:Maxim Integrated Products 功能描述:LOW-COST, HIGH-RELIABILITY, 0.5V TO 3.3V O-RI - Rail/Tube |
| MAX8555AETB-T | 功能描述:功率驱动器IC RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX8555AEUB | 功能描述:功率驱动器IC RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX8555AEUB+ | 功能描述:功率驱动器IC .5-3.3V ORing MOSFET Controller RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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