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| 型号： | MAX8632ETI+T |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 26/29页 |
| 文件大小： | 0K |
| 描述： | IC PWR SUPPLY DDR 28-TQFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 应用： | 控制器，DDR |
| 输入电压： | 2 V ~ 28 V |
| 输出数： | 1 |
| 输出电压： | 1.8V，2.5V，0.7 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 28-WFQFN 裸露焊盘 |
| 供应商设备封装： | 28-TQFN-EP（5x5） |
| 包装： | 带卷 (TR) |
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Integrated DDR Power-Supply Solution for
Desktops, Notebooks, and Graphic Cards
+5V BIAS
SUPPLY
AV DD
V DD
IN
BST
V IN
MAX8632
DH
R POS
VOLTAGE-
POSITIONED
OUTPUT
LX
DL
PGND1
GND
FB
Figure 9. Voltage-Positioned Output
OUT
thick copper PC boards (2oz vs. 1oz) can enhance
full-load efficiency by 1% or more. Correctly routing
PC board traces is a difficult task that must be
approached in terms of fractions of centimeters,
where a single m ? of excess trace resistance caus-
es a measurable efficiency penalty.
Special Layout Considerations for LDO Section
The capacitor (or capacitors) at VTT should be placed
as close to VTT and PGND2 (pins 12 and 11) as possi-
ble to minimize the series resistance/inductance of the
trace. The PGND2 side of the capacitor must be short
with a low-impedance path to the exposed pad under-
?
?
?
?
The LX and PGND1 connections to the low-side
MOSFET for current sensing must be made using
Kelvin-sense connections.
When trade-offs in trace lengths must be made, it is
preferable to allow the inductor-charging path to be
made longer than the discharge path. For example,
it is better to allow some extra distance between the
input capacitors and the high-side MOSFET than to
allow distance between the inductor and the low-
side MOSFET or between the inductor and the out-
put filter capacitor.
Route high-speed switching nodes (BST, LX, DH,
and DL) away from sensitive analog areas (REF, FB,
and ILIM).
Input ceramic capacitors must be placed as close
as possible to the high-side MOSFET drain and the
low-side MOSFET source. Position the MOSFETs so
the impedance between the input capacitor termi-
nals and the MOSFETs is as low as possible.
neath the IC. The exposed pad must be star-connected
to GND (pin 24) and PGND2 (pin 11). Connect PGND1
(pin 23) separately to the nearby PGND plane at the
source of the low-side MOSFET. Do not connect this
pin directly to the exposed pad as this can inject unde-
sirable switching noise into the clean analog GND.
Instead, PGND1 (pin 23) is connected to PGND2 (pin
11) by the large PGND plane. A narrower trace can be
used to connect the output voltage on the VTT side of
the capacitor back to VTTS (pin 9). For best perfor-
mance, the VTTI bypass capacitor must be placed as
close to VTTI (pin 13) as possible. REFIN (pin 14)
should be separately routed with a clean trace and
adequately bypassed to GND. Refer to the MAX8632
evaluation kit data sheet for PC board guidelines.
26
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MAX8632EVKIT | 功能描述:电源管理IC开发工具 RoHS:否 制造商:Maxim Integrated 产品:Evaluation Kits 类型:Battery Management 工具用于评估:MAX17710GB 输入电压: 输出电压:1.8 V |
| MAX8633ELA+ | 制造商:Maxim Integrated Products 功能描述: |
| MAX8633ELA+T | 功能描述:低压差稳压器 - LDO Dual 300mA Pin-Prog LDO RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| MAX8633ETA+ | 制造商:Maxim Integrated Products 功能描述:LDO REG 1.5V TO 3V 0.3A 8TDFN EP - Rail/Tube |
| MAX8633ETA+T | 功能描述:低压差稳压器 - LDO Dual 300mA Pin-Prog LDO RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
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