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参数资料
| 型号： | MAX8672ETD+T |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 2/17页 |
| 文件大小： | 0K |
| 描述： | IC MANAGE NIMH BACKUP 14-TDFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 功能： | 备份管理 |
| 电池化学： | 镍金属氢化物 |
| 电源电压： | 2.7 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 14-WFDFN 裸露焊盘 |
| 供应商设备封装： | 14-TDFN-EP（3x3） |
| 包装： | 带卷 (TR) |
Complete Backup Management
IC for NiMH Batteries
ABSOLUTE MAXIMUM RATINGS
IN, BATT, BST, LDO, UV to GND ..........................-0.3V to +6.0V
FBL to GND ...............................................-0.3V to (V BST + 0.3V)
CT, CHGI, TRKI, CHGV, THRM,
DR to GND ...............................................-0.3V to (V IN + 0.3V)
ILX ..................................................................................0.9A RMS
Continuous Power Dissipation (T A = +70°C)
14-Pin, 3mm x 3mm TDFN
(derate 18.2 mW/°C above +70°C) .........................1454.5mW
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V IN = 3.6V, T A = -40°C to +85°C, C CT = 0.1μF, unless otherwise noted.) (Note 1)
PARAMETER
IN Voltage Range
IN Undervoltage Lockout Threshold
IN Supply Current
CONDITIONS
V IN rising, hysteresis = 100mV (typ)
V BATT > V BATT(CHG)
MIN
2.7
2.20
TYP
2.45
40
MAX
5.5
2.60
100
UNITS
V
V
μA
Internal Load Current on BST
(Note 2)
V BST = 3.3V, no
BST or LDO load,
boost and LDO on
V IN = 3.3 V
T A = -40°C to +50°C
V IN = 0V
T A = -40°C to +85°C
117
91
91
170
125
150
μA
BATT Quiescent Supply
Current—Backup Mode
BATT Quiescent Supply Current—Charging
V BATT = 1.55V, V BST = 3.3V,
V IN = 0V, V BATT(CHG) = 1.5V
V BATT = 1.55V, V BST = 3.3V, V IN = 3.6V
3
3
μA
μA
BATT Leakage Current to IN
Total BATT Battery Leakage Current During
UVLO (BATT, LX, and DR Leakage)
V BATT = 3.0V,
V IN = 0V
V BATT = 0 to 3.0V
T A = +25 o C
T A = +85 o C
T A = -40°C to +50°C
T A = +85 o C
0.01
0.07
5
50
0.1
50
μA
nA
CHARGER AND BATTERY
1mA ≤ I BATT(CHG) ≤ 20mA,
V IN - V BATT > 400mV
T A = -40 o C to +85 o C
-10
+10
T A = -40 C to +85 C
CHGI Current-Limit Accuracy
I BATT(CHG) = 1mA, V IN -
V BATT > 400mV
0.1mA ≤ I BATT(CHG) ≤ 1mA,
V IN - V BATT > 400mV
T A = 0 o C to +85 o C
o o
T A = -40 o C to +85 o C
-10
-15
-20
+10
+15
+20
%
CHGI Bias Voltage
600
mV
CHGI Resistor Range
5
1000
k Ω
I BATT(TRK) = 1mA
T A = -40 o C to +85 o C
-10
+10
T A = -40 C to +85 C
TRKI Current-Limit Accuracy
DC Trickle-Current Programming Range
Charge-Current Programming Range
I BATT(TRK) = 0.1mA
I BATT(TRK)
I BATT(CHG)
T A = 0 o C to +85 o C
o o
-10
-15
0.1
0.1
+10
+15
1
20
%
mA
mA
TRKI Bias Voltage
600
mV
TRKI Resistor Range
Charger Dropout Voltage
V IN - V BATT where I BATT(CHG) falls by 10% of initial
value; V IN = 3.6V, I BATT(CHG) = 20mA
100
250
1000
k Ω
mV
2
_______________________________________________________________________________________
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