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| 型号： | MAX8731AETI+T |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 28/32页 |
| 文件大小： | 0K |
| 描述： | IC SMBUS LVL2 BATT CHRGR 28TQFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 功能： | 充电管理 |
| 电池化学： | 多化学 |
| 电源电压： | 8 V ~ 26 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 28-WFQFN 裸露焊盘 |
| 供应商设备封装： | 28-TQFN-EP（5x5） |
| 包装： | 带卷 (TR) |
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SMBus Level 2 Battery Charger
with Remote Sense
where t TRANS is the driver’s transition time and can be
calculated as follows:
The total power low-side MOSFET dissipation is:
t TRANS = ?
+
?× I
? 1 1 ? 2 Q G
? I Gsrc I Gsnk ? GATE
, and f SW ≈ 400 kHz
PD TOTAL ( Low Side ) ≈ PD CONDUCTION ( Low Side )
+ PD BDY ( Low Side )
These calculations provide an estimate and are not a sub-
I GATE is the peak gate-drive current.
The following is the power dissipated due to the high-
side n-channel MOSFET’s output capacitance (C RSS ):
stitute for breadboard evaluation, preferably including a
verification using a thermocouple mounted on the MOSFET.
Inductor Selection
V 2
PD COSS ( HighSide ) ≈ DCIN
× C RSS × f SW
2
The charge current, ripple, and operating frequency
(off-time) determine the inductor characteristics. For
optimum efficiency, choose the inductance according
to the following equation:
The following high-side MOSFET’s loss is due to the
L = BATT OFF
reverse-recovery charge of the low-side MOSFET ’s
body diode:
PD QRR (HighSide) = Q RR2 x V DCIN x f SW x 0.5
Ignore PD QRR (HighSide) if a Schottky diode is used
parallel to the low-side MOSFET.
The total high-side MOSFET power dissipation is:
PD TOTAL ( HighSide ) ≈ PD CONDUCTION ( HighSide )
+ PD SWITCHING ( HighSide ) + PD COSS ( HighSide )
+PD QRR (HighSide)
Switching losses in the high-side MOSFET can become
an insidious heat problem when maximum AC adapter
voltages are applied. If the high-side MOSFET chosen
for adequate R DS(ON) at low-battery voltages becomes
hot when biased from V IN(MAX) , consider choosing
another MOSFET with lower parasitic capacitance. For
the low-side MOSFET (N2), the worst-case power dissi-
pation always occurs at maximum input voltage:
V × t
0 . 3 × I CHG
This sets the ripple current to 1/3 the charge current
and results in a good balance between inductor size
and efficiency. Higher inductor values decrease the rip-
ple current. Smaller inductor values save cost but
require higher saturation current capabilities and
degrade efficiency.
Inductor L1 must have a saturation current rating of at
least the maximum charge current plus 1/2 the ripple
current ( Δ IL):
I SAT = I CHG + (1/2) Δ IL
The ripple current is determined by:
Δ IL = V BATT × t OFF / L
PD CONDUCTION ( Low Side ) = ? 1 ?
?
?
V FBS _ ?
V CSSP ? ?
where:
× I CHG 2 × R DS ( ON )
The following additional loss occurs in the low-side
t OFF = 2.5μs (V DCIN - V BATT ) / V DCIN for V BATT < 0.88
V DCIN
MOSFET due to the body diode conduction losses:
or during dropout:
PD BDY ( Low Side ) = 0 . 05 × I PEAK × 0 . 4 V
t OFF = 0.3μs for V BATT > 0.88 V DCIN
28
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MAX8731AEVKIT+ | 功能描述:电源管理IC开发工具 MAX8731A Eval Kit RoHS:否 制造商:Maxim Integrated 产品:Evaluation Kits 类型:Battery Management 工具用于评估:MAX17710GB 输入电压: 输出电压:1.8 V |
| MAX8731AEVSYS | 功能描述:电池管理 Evaluation System for the MAX8731A (includes an EVKit and the Maxim SMBUSMON2 board) RoHS:否 制造商:Texas Instruments 电池类型:Li-Ion 输出电压:5 V 输出电流:4.5 A 工作电源电压:3.9 V to 17 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:VQFN-24 封装:Reel |
| MAX8731ETI+ | 制造商:Maxim Integrated Products 功能描述:CHGR MULTI-CHEM 8A 0V TO 19.2V 28TQFN - Rail/Tube |
| MAX8731ETI+T | 制造商:Maxim Integrated Products 功能描述:CHGR MULTI-CHEM 8A 0V TO 19.2V 28TQFN - Tape and Reel |
| MAX8731EVKIT | 功能描述:电池管理 SMBus Level 2 Battery Charger with Remote Sense RoHS:否 制造商:Texas Instruments 电池类型:Li-Ion 输出电压:5 V 输出电流:4.5 A 工作电源电压:3.9 V to 17 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:VQFN-24 封装:Reel |
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