参数资料
型号: MAX9726AETP+T
厂商: Maxim Integrated Products
文件页数: 12/24页
文件大小: 0K
描述: IC AMP AUDIO .124W STER 20TQFN
标准包装: 2,500
系列: DirectDrive®
类型: AB 类
输出类型: 耳机,2-通道(立体声)
在某负载时最大输出功率 x 通道数量: 124mW x 2 @ 16 欧姆
电源电压: 2.7 V ~ 5.5 V
特点: 低音增强模式,消除爆音,I²C,静音,短路和热保护,关机,音量控制
安装类型: 表面贴装
供应商设备封装: 20-TQFN-EP(4x4)
封装/外壳: 20-WFQFN 裸露焊盘
包装: 带卷 (TR)
MAX9726
DirectDrive, Headphone Amplifier with
BassMax, I2C, Volume and Gain Control
2
______________________________________________________________________________________________________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS (5V Supply)
(VDD = SHDN = 5V, PGND = SGND = 0V, C1 = C2 = 1F, CPREG = CNREG = 1F, BM_ = 0V, RIN = 10kΩ, RF = 10kΩ, maximum vol-
ume (overall gain = 0dB), BassMax disabled. Load connected between OUT_ and PGND where specified. TA = TMIN to TMAX, unless
otherwise noted. Typical values are at TA = +25°C.) (Note 1)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
VDD to PGND............................................................-0.3V to +6V
PVSS to SVSS .........................................................-0.3V to +0.3V
SGND to PGND .....................................................-0.3V to +0.3V
C1P to PGND..............................................-0.3V to (VDD + 0.3V)
C1N to PGND............................................(PVSS - 0.3V) to +0.3V
PVSS, SVSS to PGND ................................................+0.3V to -6V
IN_ to SGND...................................(SVSS - 0.3V) to (VDD + 0.3V)
FB_ to SGND ..................................(SVSS - 0.3V) to (VDD + 0.3V)
SDA, SCL to PGND ....................................-0.3V to (VDD + 0.3V)
SHDN to PGND ..........................................-0.3V to (VDD + 0.3V)
OUT_ to SGND ............................................................-3V to +3V
BM_ to SGND ..............................................................-3V to +3V
Duration of OUT_ Short Circuit to PGND....................Continuous
Continuous Current Into/Out of:
VDD, C1P, PGND, C1N, PVSS, SVSS, or OUT_ ...........±850mA
Any Other Pin................................................................±20mA
Continuous Power Dissipation (TA = +70°C, multilayer board)
20-Bump UCSP (derate 10mW/°C above +70°C) .......800mW
20-Pin TQFN (derate 25.6mW/°C above +70°C) .......2051mW
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
OUTL and OUTR ESD Protection (Human Body Model)....±7.5kV
Bump Temperature (soldering) Reflow............................+230°C
Lead Temperature (soldering, 10s) .................................+300°C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
GENERAL
Supply Voltage Range
VDD
2.7
5.5
V
Quiescent Supply Current
IDD
No load
5.5
10
mA
Shutdown Supply Current
IDD_SHDN
SHDN = 0V
8
15
A
Turn-On Time
tON
440
s
Turn-Off Time
tOFF
1s
Thermal-Shutdown Threshold
TTHRES
+150
°C
Thermal-Shutdown Hysteresis
THYST
12
°C
HEADPHONE AMPLIFIER
Output Offset Voltage
VOSHP
Measured between OUT_ and SGND, gain
= 0dB, RIN = RF = 10k
Ω, TA = +25°C
(Note 2)
±0.6
10
mV
Input Offset Voltage of Input
Amplifier
VOS
Referenced to SGND, measured between
FBR, FBL, and SGND
3mV
Input Bias Current
IB
±20
±100
nA
BMR, BML Input Bias Current
IBIAS_BB
±20
±100
nA
DC, VDD = 2.7V to 5.5V
80
97
f = 1kHz, 100mVP-P ripple
85
Power-Supply Rejection Ratio
(Note 2)
PSRR
f = 20kHz, 100mVP-P ripple
74
dB
RL = 16
Ω
124
Output Power
POUT
THD+N = 1%,
fIN = 1kHz
RL = 32
Ω
104
mW
RL = 16
Ω, POUT = 15mW, fIN = 1kHz
0.04
Total Harmonic Distortion Plus
Noise
THD+N
RL = 32
Ω, POUT = 30mW, fIN = 1kHz
0.02
%
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