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参数资料
| 型号： | MB84VD2008-10 |
| 厂商： | FUJITSU LTD |
| 元件分类： | 存储器 |
| 英文描述： | 8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM |
| 中文描述： | SPECIALTY MEMORY CIRCUIT, PBGA48 |
| 封装： | PLASTIC, BGA-48 |
| 文件页数： | 1/30页 |
| 文件大小： | 393K |
| 代理商： | MB84VD2008-10 |
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DS05-50111-1E
FUJITSU SEMICONDUCTOR
DATA SHEET
MCP (Multi-Chip Package) FLASH MEMORY & SRAM
CMOS
8M (
×
16) FLASH MEMORY &
2M (
×
16) STATIC RAM
MB84VD2008
-10
/MB84VD2009
-10
I
FEATURES
Power supply voltage of 2.7 to 3.6 V
High performance
100 ns maximum access time
Operating Temperature
–20 to +85
°
C
— FLASH MEMORY
Simultaneous operations Read-while Erase or Read-while-Program
Minimum 100,000 write/erase cycles
Sector erase architecture
Two 16 K byte, four 8 K bytes, two 32 K byte, and fourteen 64 K bytes.
Any combination of sectors can be concurrently erased. Also supports full chip erase.
Boot Code Sector Architecture
MB84VD2008: Top sector
MB84VD2009: Bottom sector
Embedded Erase
TM
Algorithms
Automatically pre-programs and erases the chip or any sector
Embedded Program
TM
Algorithms
Automatically writes and verifies data at specified address
Data Polling and Toggle Bit feature for detection of program or erase cycle completion
Ready-Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
Automatic sleep mode
When addresses remain stable, automatically switch themselves to low power mode.
Low V
CC
write inhibit
≤
2.5 V
Erase Suspend/Resume
Suspends the erase operation to allow a read in another sector within the same device
Please refer to "MBM29DL800TA/BA" data sheet in detailed function
— SRAM
Power dissipation
Operating: 50 mA max.
Standby : 50
μ
A max.
Data retention supply voltage: 2.0 V to 3.6 V
Embedded Erase
TM
and Embedded Program
TM
are trademarks of Advanced Micro Devices, Inc.
相关PDF资料 |
PDF描述 |
|---|---|
| MB84VD2009-10 | 8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM |
| MB84VD2008 | 8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM |
| MB84VD2009 | 8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM |
| MB84VD21083-85-PBS | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV06; Number of Contacts:53; Connector Shell Size:23; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight |
| MB84VD2109X-85 | RF/Coaxial Connector; RF Coax Type:N; Contact Termination:Crimp; Impedance:50ohm; Body Style:Straight Plug; RG Cable Type:59, 62, 140, 210, Belden 8241, 8263, 8279, 9209 RoHS Compliant: Yes |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MB84VD2009 | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM |
| MB84VD2009-10 | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM |
| MB84VD21081 | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM |
| MB84VD21081-85-PBS | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM |
| MB84VD21081-85-PTS | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM |
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