参数资料
型号: MB84VD2008-10
厂商: FUJITSU LTD
元件分类: 存储器
英文描述: 8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA48
封装: PLASTIC, BGA-48
文件页数: 12/30页
文件大小: 393K
代理商: MB84VD2008-10
12
MB84VD2008
-10
/MB84VD2009
-10
I
AC CHARACTERISTICS
CE Timing
Timing Diagram for alternating SRAM to Flash
Read Only Operations Characteristics (Flash)
Note:
Test Conditions–Output Load:1 TTL gate and 30 pF
Input rise and fall times: 5 ns
Input pulse levels: 0.0 V to 3.0 V
Timing measurement reference level
Input: 1.5 V
Output: 1.5 V
Parameter
Symbols
Description
Test Setup
-10
Unit
JEDEC
Standard
t
CCR
CE Recover Time
Min.
0
ns
Parameter
Symbols
Description
Test
Setup
-10
(Note)
Unit
JEDEC
Standard
Min.
Max.
t
AVAV
t
RC
Read Cycle Time
100
ns
t
AVQV
t
ACC
Address to Output Delay
CEf = V
IL
OE = V
IL
100
ns
t
ELQV
t
CE
f
Chip Enable to Output Delay
OE = V
IL
100
ns
t
GLQV
t
OE
Output Enable to Output Delay
40
ns
t
EHQZ
t
DF
Chip Enable to Output High-Z
30
ns
t
GHQZ
t
DF
Output Enable to Output High-Z
30
ns
t
AXQX
t
OH
Output Hold Time From Addresses,
CEf or OE, Whichever Occurs First
0
ns
t
READY
RESET Pin Low to Read Mode
20
μs
t
ELFL
t
ELFH
CE or BYTE Switching Low or High
5
ns
CEf
t
CCR
t
CCR
CEs
相关PDF资料
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MB84VD2009-10 8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM
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