参数资料
型号: MB84VD2008-10
厂商: FUJITSU LTD
元件分类: 存储器
英文描述: 8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA48
封装: PLASTIC, BGA-48
文件页数: 14/30页
文件大小: 393K
代理商: MB84VD2008-10
14
MB84VD2008
-10
/MB84VD2009
-10
Erase/Program Operations (Flash)
Parameter Symbols
JEDEC
Standard
t
AVAV
t
WC
t
AVWL
t
AS
t
AVEL
t
AS
Note
: 1. This does not include the preprogramming time.
2. This timing is for Sector Protection Operation.
Description
-10
Typ.
Unit
Min.
100
0
0
Max.
Write Cycle Time
Address Setup Time (WE to Addr.)
Address Setup Time (CEf to Addr.)
Address Setup Time to OE Low During Toggle Bit
Polling
Address Hold Time (WE to Addr.)
Address Hold Time (CEf to Addr.)
Address Hold Time from CE or OE High During Toggle
Bit Polling
Data Setup Time
Data Hold Time
ns
ns
ns
t
ASO
15
ns
t
WLAX
t
ELAX
t
AH
t
AH
50
50
ns
ns
t
AHT
0
ns
t
DVWH
t
WHDX
t
DS
t
DH
50
0
0
10
20
20
0
0
0
0
0
0
50
50
30
30
50
4
500
0
500
200
30
8
1
15
100
90
30
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs
sec
sec
μs
μs
ns
ns
ns
ns
ns
ns
ns
ns
t
OEH
Output Enable Hold Time
Read
Toggle and Data Polling
t
GHEL
t
GHWL
t
WLEL
t
ELWL
t
EHWH
t
WHEH
t
WLWH
t
ELEH
t
WHWL
t
EHEL
t
WHWH1
t
CEPH
t
OEPH
t
GHEL
t
GHWL
t
WS
t
CS
t
WH
t
CH
t
WP
t
CP
t
WPH
t
CPH
t
WHWH1
CE High During Toggle Bit Polling
OE High During Toggle Bit Polling
Read Recover Time Before Write (OE to CEf)
Read Recover Time Before Write (OE to WE)
WE Setup Time (CEf to WE)
CEf Setup Time (WE to CEf)
WE Hold Time (CEf to WE)
CEf Hold Time (WE to CEf)
Write Pulse Width
CEf Pulse Width
Write Pulse Width High
CEf Pulse Width High
Byte Programming Operation
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 1)
t
VCS
t
VLHT
t
VIDR
t
RB
t
RP
t
RH
t
EOE
t
BUSY
t
FLQZ
t
FHQV
V
CC
f Setup Time
Voltage Transition Time (Note 2)
Rise Time to V
ID
(Note 2)
Recover Time from RY/BY
RESET Pulse Width
RESET Hold Time Before Read
Delay Time from Embedded Output Enable
Program/Erase Valid to RY/BY Delay
BYTE Switching Low to Output High-Z
BYTE Switching High to Output Active
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