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参数资料
| 型号： | MB85341C-70 |
| 厂商： | Fujitsu Limited |
| 英文描述： | CMOS 1M×32 BIT Hyper Page Mode DRAM Module(CMOS 1M×32位超级页面存取模式动态RAM模块) |
| 中文描述： | 的CMOS 100万× 32位的超页模式内存的CMOS（100万× 32位超级页面存取模式动态内存模块） |
| 文件页数： | 1/11页 |
| 文件大小： | 416K |
| 代理商： | MB85341C-70 |
DS05-11216-1E
FUJITSU SEMICONDUCTOR
DATA SHEET
MEMORY
CMOS
1 M
FAST PAGE MODE DRAM MODULE
×
32 BITS
MB85341C-60/-70
CMOS 1,048,576
×
32 BITS Fast Page Mode DRAM Module
I
DESCRIPTION
The Fujitsu MB85341C is a fully decoded, CMOS Dynamic Random Access Memory (DRAM) module consisting
of eight MB814400C devices. The MB85341C is optimized for those applications requiring high speed, high
performance and large memory storage. The operation and electrical characteristics of the MB85341C are the
same as the MB814400C which features fast page mode operation. For ease of memory expansion, the
MB85341C is offered in a 72-pad Single In-line Memory Module package (SIMM).
I
PRODUCT LINE & FEATURES
Parameter
MB85341C-60
MB85341C-70
RAS Access Time
60 ns max.
70 ns max.
Random Cycle Time
110 ns min.
125 ns min.
Address Access Time
30 ns max.
35 ns max.
CAS Access Time
15 ns max.
20 ns max.
Fast Page Mode Cycle Time
40 ns min.
45 ns min.
Power Dissipation
Operating Mode
2684 mW max.
2376 mW max.
Standby Mode
88 mW max.
88 mW max.
Self Refresh Mode
44 mW max.
44 mW max.
This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields. However, it is advised that normal precautions be
taken to avoid application of any voltage higher than maximum rated voltages to this high-impedance circuit.
Organization: 1,048,576 words
×
32 bits
Memory: MB814400C, 8 pcs
Decoupling Capacitor: 16 pcs
5.0 V
±
10% Supply Voltage
1,024 Refresh Cycles / 16.4 ms
Fast page mode operation
Package and Ordering Information:
72-pad SIMM, order as
MB85341C-
××
PJPBK
(PJPBK = Gold Pad)
MB85341C-
××
PJPB
(PJPB = Solder Pad)
相关PDF资料 |
PDF描述 |
|---|---|
| MB85342C-60 | CMOS 2M×32 BIT Hyper Page Mode DRAM Module(CMOS 2M×32位超级页面存取模式动态RAM模块) |
| MB85342C-70 | CMOS 2M×32 BIT Hyper Page Mode DRAM Module(CMOS 2M×32位超级页面存取模式动态RAM模块) |
| MB85343C-60 | CMOS 1M×32 BIT Hyper Page Mode DRAM Module(CMOS 1M×32位超级页面存取模式动态RAM模块) |
| MB85343C-70 | CMOS 1M×32 BIT Hyper Page Mode DRAM Module(CMOS 1M×32位超级页面存取模式动态RAM模块) |
| MB85344C-60 | CMOS 2M×32 BIT Hyper Page Mode DRAM Module(CMOS 2M×32超级页面存取模式动态RAM模块) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MB85AS4MTPF-G-BCERE1 | 功能描述:IC RERAM 4MBIT 5MHZ 8SOP 制造商:fujitsu electronics america, inc. 系列:- 包装:剪切带（CT） 零件状态:在售 存储器类型:非易失 存储器格式:RAM 技术:ReRAM（电阻式 RAM） 存储容量:4Mb （512K x 8） 时钟频率:5MHz 写周期时间 - 字，页:17ms 存储器接口:SPI 电压 - 电源:1.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C（TA） 安装类型:表面贴装 封装/外壳:8-SOIC（0.209"，5.30mm 宽） 供应商器件封装:8-SOP 标准包装:1 |
| MB85R1001 | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:1 M Bit (128 K 】 8) |
| MB85R1001_08 | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:1 M Bit (128 K 】 8) |
| MB85R1001_09 | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:Memory FRAM CMOS 1 M Bit (128 K × 8) |
| MB85R1001A | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:Memory FRAM CMOS 1 M Bit (128 K x 8) |
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