参数资料
型号: MB85344C-60
厂商: Fujitsu Limited
英文描述: CMOS 2M×32 BIT Hyper Page Mode DRAM Module(CMOS 2M×32超级页面存取模式动态RAM模块)
中文描述: 的CMOS 200万× 32位的超页模式内存的CMOS(200万× 32超级页面存取模式动态内存模块)
文件页数: 4/11页
文件大小: 474K
代理商: MB85344C-60
4
MB85344C-60/MB85344C-70
I
(Referenced to V
RECOMMENDED OPERATING CONDITIONS
)
SS
Note: *Undershoots of up to –2.0 volts with a pulse width not exceeding 20 ns are acceptable.
I
(Recommended operating conditions unless otherwise noted.)
DC CHARACTERISTICS
Notes: *1.
Referenced to V
I
CC
depends on the output load conditions and cycle rate. The specific values are obtained with the
output open.
I
CC
depends on the number of address change as RAS = V
I
CC1
, I
CC3
and I
CC5
are specified at one time of address change during RAS = V
I
CC4
is specified at one time of address change during one Page cycle.
SS
.
*2.
IL
and CAS = V
IH
, V
IL
and CAS = V
> –0.3V.
IL
IH
.
Parameter
Symbol
Min.
Typ.
Max.
Unit
Supply Voltage
V
CC
4.5
5.0
5.5
V
Ground
V
SS
0
V
Input High Voltage, all inputs
V
IH
2.4
6.5
V
Input Low Voltage, all inputs*
V
IL
–0.3
0.8
V
Ambient Temperature
T
A
0
70
°
C
Parameter
Test Condition
Symbol Min.
Max. Unit
Output High Voltage*
1
I
OH
= –5 mA
V
OH
2.4
V
Output Low Voltage*
1
I
OL
= 4.2 mA
V
OL
0.4
V
Input Leakage Current
RAS
0 V
4.5 V
V
SS
not under test = 0 V
V
IN
V
CC
5.5 V,
5.5 V,
= 0 V, all other pins
I
I (
L
)
–30
30
μ
A
CAS
–30
30
Address, WE
–90
90
Output Leakage Current
0 V
Data out disabled
V
OUT
5.5 V,
I
O(
L
)
–10
10
μ
A
Operating Current*
(Average power supply current)
2
MB85344C-60
RAS & CAS cycling,
t
RC
= min.
I
CC1
504
mA
MB85344C-70
448
Standby Current
(Power supply current)
TTL Level
RAS = CAS =V
IH
I
CC2
32
mA
CMOS Level
RAS = CAS
V
CC
–0.2 V
16
Refresh Current #1*
(Average power supply current)
2
MB85344C-60
CAS = V
t
RC
= min.
IH
, RAS = cycling,
I
CC3
504
mA
MB85344C-70
448
Hyper Page Mode
Current*
2
MB85344C-60
RAS = V
t
HPC
= min.
IL
, CAS = cycling,
I
CC4
544
mA
MB85344C-70
456
Refresh Current #2*
(Average power supply current)
2
MB85344C-60
RAS = cycling, CAS-before-
RAS, t
RC
= min.
I
CC5
408
mA
MB85344C-70
368
Refresh Current #3
(Average power supply current)
MB85344C-60
RAS = CAS
Self refresh
0.2V,
I
CC9
16
mA
MB85344C-70
16
相关PDF资料
PDF描述
MB85344C-70 CMOS 2M×32 BIT Hyper Page Mode DRAM Module(CMOS 2M×32超级页面存取模式动态RAM模块)
MB85391A-60 CMOS 4M×32Bit Fast Page Mode DRAM Module S(CMOS 4M×32位 快速页面存取模式动态RAM)
MB85391A-70 CMOS 4M×32Bit Fast Page Mode DRAM Module S(CMOS 4M×32位 快速页面存取模式动态RAM)
MB85392A-60 CMOS 8M×32Bit Fast Page Mode DRAM Module(CMOS 8M×32位 快速页面存取模式动态RAM)
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