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参数资料
| 型号： | MB85344C-70 |
| 厂商： | Fujitsu Limited |
| 英文描述： | CMOS 2M×32 BIT Hyper Page Mode DRAM Module(CMOS 2M×32超级页面存取模式动态RAM模块) |
| 中文描述： | 的CMOS 200万× 32位的超页模式内存的CMOS（200万× 32超级页面存取模式动态内存模块） |
| 文件页数： | 1/11页 |
| 文件大小： | 474K |
| 代理商： | MB85344C-70 |
1
DS05-11211-1E
FUJITSU SEMICONDUCTOR
DATA SHEET
MEMORY
CMOS 2M
HYPER PAGE MODE DRAM MODULE
×
32 BIT
MB85344C-60/-70
CMOS 2,097,152
×
32 Bit Hyper Page Mode DRAM Module
I
DESCRIPTION
The Fujitsu MB85344C is a fully decoded, CMOS dynamic random access memory (DRAM) module consisting
of sixteen MB814405C devices. The MB85344C is optimized for those applications requiring high speed, high
performance and large memory storage. The operation and electrical characteristics of the MB85344C are the
same as the MB814405C which features hyper page mode operation providing extended valid time for data
output and higher speed random access of upto 1,024-bit of data within the same row than the fast page mode.
For ease of memory expansion, the MB85344C is offered in a 72-pad Single In-line Memory Module package
(SIMM).
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ABSOLUTE MAXIMUM RATINGS (See NOTE)
NOTE:
Permanent device damage may occur if the above
operation should be restricted to the conditions as detailed in the operational sections of this data sheet.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Absolute Maximum Ratings
are exceeded. Functional
Parameter
Symbol
Value
Unit
Supply Voltage
V
CC
–0.5 to +7.0
V
Input Voltage
V
IN
–0.5 to +7.0
V
Output Voltage
V
OUT
–0.5 to +7.0
V
Short Circuit Output Current
I
OUT
±
50
mA
Power Dissipation
P
D
16
W
Storage Temperature
T
STG
–55 to +125
°
C
This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields. However, it is advised that normal precautions be
taken to avoid application of any voltage higher than maximum rated voltages to this high impedance circuit.
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| MB85AS4MTPF-G-BCERE1 | 功能描述:IC RERAM 4MBIT 5MHZ 8SOP 制造商:fujitsu electronics america, inc. 系列:- 包装:剪切带（CT） 零件状态:在售 存储器类型:非易失 存储器格式:RAM 技术:ReRAM（电阻式 RAM） 存储容量:4Mb （512K x 8） 时钟频率:5MHz 写周期时间 - 字，页:17ms 存储器接口:SPI 电压 - 电源:1.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C（TA） 安装类型:表面贴装 封装/外壳:8-SOIC（0.209"，5.30mm 宽） 供应商器件封装:8-SOP 标准包装:1 |
| MB85R1001 | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:1 M Bit (128 K 】 8) |
| MB85R1001_08 | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:1 M Bit (128 K 】 8) |
| MB85R1001_09 | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:Memory FRAM CMOS 1 M Bit (128 K × 8) |
| MB85R1001A | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:Memory FRAM CMOS 1 M Bit (128 K x 8) |
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