参数资料
型号: MB85392A-60
厂商: Fujitsu Limited
英文描述: CMOS 8M×32Bit Fast Page Mode DRAM Module(CMOS 8M×32位 快速页面存取模式动态RAM)
中文描述: 的CMOS 8米× 32Bit的快速页面模式内存的CMOS(8米× 32位快速页面存取模式动态内存)
文件页数: 7/11页
文件大小: 320K
代理商: MB85392A-60
7
MB85392A-60/MB85392A-70
Notes: 1.
An initial pause (RAS = CAS =V
IH
) of 200
μ
s is required after power-up followed by any eight RAS-only
cycles before proper device operation is achieved. If an internal refresh counter is used, a minimum of
eight CAS-before-RAS initialization cycles are required instead of eight RAS cycles.
AC characteristics assume t
T
= 5 ns.
V
IH
(min.) and V
IL
(max.) are reference levels for measuring the timing of input signals. Transition times
are measured between V
IH
(min.) and V
IL
(max.).
Assumes that t
RCD
t
RCD
(max.), t
RAD
t
RAD
(max.). If t
RCD
is greater than the maximum recommended
value shown in this table, t
RAC
will be increased by the amount that t
RCD
exceeds the value shown.
If t
RCD
t
RCD
(max.), t
RAD
t
RAD
(max.), and t
ASC
t
AA
– t
CAC
– t
T
, access time is t
CAC
.
If t
RAD
t
RAD
(max.) and t
ASC
t
AA
– t
CAC
– t
T
, access time is t
AA
.
Measured with a load equivalent to two TTL loads and 100 pF.
t
OFF
and t
OEZ
are specified that output buffer change to high impedance state.
Operation within the t
RCD
(max.) limit ensures that t
RAC
(max.) can be met. t
RCD
(max.) is specified as a
reference point only; if t
RCD
is greater than the specified t
RCD
(max.) limit, access time is controlled
exclusively by t
CAC
or t
AA
.
10. t
RCD
(min.) = t
RAH
(min.)+ 2 t
T
+ t
ASC
(min.).
11. Operation within the t
RAD
(max.) limit ensures that t
RAC
(max.) can be met. t
RAD
(max.) is specified as
a reference point only; if t
RAD
is greater than the specified t
RAD
(max.) limit, access time is controlled
exclusively by t
CAC
or t
AA
.
12. Either t
RRH
or t
RCH
must be satisfied for a read cycle.
13. t
WCS
is specified as a reference point only. If t
WCS
t
WCS
(min.) the data output pin will remain High-Z
state through entire cycle.
14. Assumes that t
WCS
< t
WCS
(min.).
15. Either t
DZC
or t
DZO
must be satisfied.
16. t
CPA
is access time from the selection of a new column address (caused by changing CAS from “L” to
“H”). Therefore, if t
CP
become long, t
CPA
also become longer than t
CPA
(max.).
17. Assumes that CAS-before-RAS refresh.
18. Assumes that test mode function.
2.
3.
4.
5.
6.
7.
8.
9.
*Source: See MB8117400A Data Sheet for details on the electricals.
相关PDF资料
PDF描述
MB85396A-60 CMOS 4M×36Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M×36位 同步动态RAM)
MB85396A-70 CMOS 4M×36Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M×36位 同步动态RAM)
MB85502-012 CMOS 8M×36Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 8M×36位 同步动态RAM)
MB85502-015 CMOS 8M×36Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 8M×36位 同步动态RAM)
MB85R1002 Memory FRAM
相关代理商/技术参数
参数描述
MB85AS4MTPF-G-BCERE1 功能描述:IC RERAM 4MBIT 5MHZ 8SOP 制造商:fujitsu electronics america, inc. 系列:- 包装:剪切带(CT) 零件状态:在售 存储器类型:非易失 存储器格式:RAM 技术:ReRAM(电阻式 RAM) 存储容量:4Mb (512K x 8) 时钟频率:5MHz 写周期时间 - 字,页:17ms 存储器接口:SPI 电压 - 电源:1.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C(TA) 安装类型:表面贴装 封装/外壳:8-SOIC(0.209",5.30mm 宽) 供应商器件封装:8-SOP 标准包装:1
MB85R1001 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:1 M Bit (128 K 】 8)
MB85R1001_08 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:1 M Bit (128 K 】 8)
MB85R1001_09 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:Memory FRAM CMOS 1 M Bit (128 K × 8)
MB85R1001A 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:Memory FRAM CMOS 1 M Bit (128 K x 8)