参数资料
型号: MB85RC16PNF-G-JNE1
厂商: Fujitsu Semiconductor America Inc
文件页数: 8/20页
文件大小: 0K
描述: IC FRAM 16KBIT 1MHZ 8SOP
特色产品: FRAM (Ferroelectric RAM)
标准包装: 1,500
格式 - 存储器: RAM
存储器类型: FRAM(Ferroelectric RAM)
存储容量: 16K (2K x 8)
速度: 1MHz
接口: I²C,2 线串口
电源电压: 2.7 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOP
包装: 托盘
其它名称: 865-1173
MB85RC16
■ FRAM ACKNOWLEDGE -- POLLING NOT REQUIRED
The MB85RC16 performs the high speed write operations, so any waiting time for an ACK* by the acknowl-
edge polling does not occur.
*: In E 2 PROM, the Acknowledge Polling is performed as a progress check whether rewriting is executed or not.
It is normal to judge by the 9th bit of Acknowledge whether rewriting is performed or not after inputting the
start condition and then the device address word (8 bits) during rewriting.
■ WRITE PROTECT (WP)
The entire memory array can be write protected by setting the WP pin to the “H” level. When the WP pin is
set to the “L” level, the entire memory array will be rewritten. Reading is allowed regardless of the WP pin's
“H” level or “L” level.
Do not change the WP signal level during the communication period from the start condition to the stop
condition.
Note : The WP pin is pulled down internally to VSS pin, therefore if the WP pin is open, the pin status is detected
as the “L” level (write enabled).
8
DS501-00001-2v0-E
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