参数资料
型号: MB85RC64PNF-G-JNE1
厂商: Fujitsu Semiconductor America Inc
文件页数: 14/20页
文件大小: 0K
描述: IC FRAM 64KBIT 400KHZ 8SOP
特色产品: FRAM (Ferroelectric RAM)
标准包装: 1,500
格式 - 存储器: RAM
存储器类型: FRAM(Ferroelectric RAM)
存储容量: 64K (8K x 8)
速度: 400kHz
接口: I²C,2 线串口
电源电压: 2.7 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOP
包装: 托盘
其它名称: 865-1175
MB85RC64
■ POWER ON SEQUENCE
V CC
2.7 V
V IH (Min)
1.0 V
V IL (Max)
0 V
tpd
tr
tp u
V CC
2.7 V
V IH (Min)
1.0 V
V IL (Max)
0 V
SDA, SCL
SDA, SCL > V CC × 0. 8 *
SDA, SCL : Don ' t care
SDA, SCL > V CC × 0. 8 *
SDA, SCL
* : SDA, SCL (Max) < V CC + 0.5 V
Parameter
SDA, SCL level hold time during power down
SDA, SCL level hold time during power up
Power supply rise time
Symbol
tpd
tpu
tr
Min
85
85
10
Value
Max
?
?
?
Unit
ns
ns
μ s
■ NOTES ON USE
? Data written before performing IR reflow is not guaranteed.
? VDD pin is required to be rising from 0 V because turning the power on from an intermediate level may
cause malfunctions, when the power is turned on.
During the access period from the start condition to the stop condition, keep the level of WP, A0, A1, and
A2 pins to “H” or “L”.
14
DS05–13109–3E
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