参数资料
型号: MB91F267APMC-GE1
厂商: Fujitsu Semiconductor America Inc
文件页数: 7/53页
文件大小: 0K
描述: IC MCU FLASH 128KB FLASH 64LQFP
标准包装: 1
系列: FR MB91265A
核心处理器: FR60Lite RISC
芯体尺寸: 32-位
速度: 33MHz
连通性: UART/USART
外围设备: DMA,WDT
输入/输出数: 49
程序存储器容量: 128KB(128K x 8)
程序存储器类型: 闪存
RAM 容量: 4K x 8
电压 - 电源 (Vcc/Vdd): 4 V ~ 5.5 V
数据转换器: A/D 11x8/10b
振荡器型: 外部
工作温度: -40°C ~ 105°C
封装/外壳: 64-LQFP
包装: 托盘
其它名称: 865-1092
18
8183F–AVR–06/12
ATtiny24A/44A/84A
The calibrated Oscillator is used to time the EEPROM accesses. Make sure the Oscillator fre-
quency is within the requirements described in “OSCCAL – Oscillator Calibration Register” on
5.3.6
Program Examples
The following code examples show one assembly and one C function for erase, write, or atomic
write of the EEPROM. The examples assume that interrupts are controlled (e.g., by disabling
interrupts globally) so that no interrupts will occur during execution of these functions.
Note:
Assembly Code Example
EEPROM_write:
; Wait for completion of previous write
sbic
EECR, EEPE
rjmp
EEPROM_write
; Set Programming mode
ldi
r16, (0<<EEPM1)|(0<<EEPM0)
out
EECR, r16
; Set up address (r18:r17) in address registers
out
EEARH, r18
out
EEARL, r17
; Write data (r19) to data register
out
EEDR, r19
; Write logical one to EEMPE
sbi
EECR, EEMPE
; Start eeprom write by setting EEPE
sbi
EECR, EEPE
ret
C Code Example
void
EEPROM_write(unsigned int ucAddress, unsigned char ucData)
{
/* Wait for completion of previous write */
while(EECR & (1<<EEPE))
;
/* Set Programming mode */
EECR = (0<<EEPM1)|(0<<EEPM0)
/* Set up address and data registers */
EEAR = ucAddress;
EEDR = ucData;
/* Write logical one to EEMPE */
EECR |= (1<<EEMPE);
/* Start eeprom write by setting EEPE */
EECR |= (1<<EEPE);
}
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