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参数资料
| 型号： | MBC13900NT1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | LEAD FREE, ULTRA SMALL, PLASTIC, CASE 318M-01, SC-70, 4 PIN |
| 文件页数： | 18/24页 |
| 文件大小： | 691K |
| 代理商： | MBC13900NT1 |
Electrical Specifications
MBC13900 Technical Data, Rev. 1.1
Freescale Semiconductor
3
Table 3. Thermal Characteristic
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction-to-Case
RθJC
400
°C/W
Note: To calculate the junction temperature use TJ = (PD x RθJC) + TC. The case temperature measured on collector
lead adjacent to the package body.
Table 4. Electrical Characteristics
Characteristic
Symbol
Min
Typ
Max
Unit
OFF Characteristic1
Collector-Emitter Breakdown Voltage (IC = 0.1 mA, IB = 0)
V(BR)CEO
6.5
7.5
-
Vdc
Collector-Base Breakdown Voltage (IC = 0.1 mA, IE = 0)
V(BR)CBO
8.0
12
-
Vdc
Emitter-Base Breakdown Voltage (IE = 0.1 mA, IC = 0)
V(BR)EBO
3.0
4.0
-
Vdc
Collector Cutoff Current (VCB = 7.0 V, IE = 0)
ICBO
--
0.1
A
Emitter Cutoff Current (VEB = 2.0 V, IC = 0)
IEBO
--
0.1
A
Base Cutoff Current (VCE = 5.0 V, IB = 0)
ICEO
--
0.1
A
ON Characteristic1
DC Current Gain (VCE = 2.0 V, IC = 5.0 mA)
hFE
100
-
200
-
Dynamic Characteristics
Current Gain Bandwidth Product
(VCE = 2.0 V, IC = 15 mA, f = 0.9 GHz)
fτ
-15-
GHz
Performance Characteristic
Insertion Gain
(VCE = 2.0 V, IC = 5.0 mA, f = 0.9 GHz)
(VCE = 2.0 V, IC = 5.0 mA, f = 1.9 GHz)
(VCE = 3.0 V, IC = 3.0 mA, f = 0.9 GHz)
(VCE = 3.0 V, IC = 3.0 mA, f = 1.9 GHz)
|S21|
2
18.5
13.5
16.5
12.5
19.5
14.5
17.5
13.5
-
dB
Maximum Stable Gain and/or Maximum Available Gain
[Note 2]
(VCE = 2.0 V, IC = 5.0 mA, f = 0.9 GHz)
(VCE = 2.0 V, IC = 5.0 mA, f = 1.9 GHz)
(VCE = 3.0 V, IC = 3.0 mA, f = 0.9 GHz)
(VCE = 3.0 V, IC = 3.0 mA, f = 1.9 GHz)
MSG, MAG
22
18
21
17.5
23
19
22
18.5
-
dB
Minimum Noise Figure
(VCE = 2.0 V, IC = 5.0 mA, f = 0.9 GHz)
(VCE = 2.0 V, IC = 5.0 mA, f = 1.9 GHz)
(VCE = 3.0 V, IC = 3.0 mA, f = 0.9 GHz)
(VCE = 3.0 V, IC = 3.0 mA, f = 1.9 GHz)
NFmin
-
0.8
0.9
0.8
0.9
1.1
0.9
1.1
dB
Associated Gain at Minimum Noise Figure
(VCE = 2.0 V, IC = 5.0 mA, f = 0.9 GHz)
(VCE = 2.0 V, IC = 5.0 mA, f = 1.9 GHz)
(VCE = 3.0 V, IC = 3.0 mA, f = 0.9 GHz)
(VCE = 3.0 V, IC = 3.0 mA, f = 1.9 GHz)
GNF
-
22
16
21
15
-
dB
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相关代理商/技术参数 |
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|---|---|
| MBC13900T1 | 功能描述:IC TRANS NPN RF LOW NOISE SC70-4 RoHS:否 类别:分离式半导体产品 >> RF 晶体管 (BJT) 系列:- 产品变化通告:Product Discontinuation 17/Dec/2010 标准包装:1 系列:- 晶体管类型:NPN 电压 - 集电极发射极击穿（最大）:4.7V 频率 - 转换:47GHz 噪声系数（dB典型值@频率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 时的最小直流电流增益 (hFE):160 @ 25mA，3V 电流 - 集电极 (Ic)（最大）:45mA 安装类型:表面贴装 封装/外壳:4-SMD，扁平引线 供应商设备封装:4-TSFP 包装:Digi-Reel® 其它名称:BFP 740FESD E6327DKR |
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