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| 型号： | MBD101G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/4页 |
| 文件大小： | 59K |
| 描述： | DIODE SCHTTKY 7V LW NOISE TO92-2 |
| 产品变化通告： | Product Discontinuation 02/Jan/2007 |
| 标准包装： | 5,000 |
| 二极管类型： | 肖特基 - 单 |
| 电压 - 峰值反向(最大)： | 7V |
| 电容@ Vr, F： | 1pF @ 0V，1MHz |
| 功率耗散（最大）： | 280mW |
| 封装/外壳： | TO-226-2，TO-92-2（TO-226AC） |
| 供应商设备封装： | TO-92 |
| 包装： | 散装 |
MBD101, MMBD101LT1
http://onsemi.com
2
TYPICAL CHARACTERISTICS
(TA
= 25
°C unless noted)
Figure 1. Reverse Leakage
TA, AMBIENT TEMPERATURE (°C)
Figure 2. Forward Voltage
VF, FORWARD VOLTAGE (VOLTS)
Figure 3. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Noise Figure
PLO, LOCAL OSCILLATOR POWER (mW)
, FORWARD CURRENT (mA)
I
F
, REVERSE LEAKAGE ( A)
I
R
1.00.1 0.2 0.5 2.01.0 105.0
11
3.0
0.6
0 1.0 2.0 3.0 4.0
1.0
0.9
0.8
0.7
0.1
0.3 0.4
100
0.0130 40 50 60 70 80 10090
0.1
130
110 120
0.07
0.05
0.02
2.0
0.5 0.6 0.7
1.0
0.7
0.5
10
1.0
Figure 5. Noise Figure Test Circuit
UHF
NOISE SOURCE
H.P. 349A
DIODE IN
TUNED
MOUNT
LOCAL
OSCILLATOR
IF AMPLIFIER
NF = 1.5 dB
f = 30 MHz
NOISE
FIGURE METER
H.P. 342A
NOTES ON TESTING AND SPECIFICATIONS
Note 1 — CD
is measured using a capacitance bridge (Boonton
Electronics Model 75A or equivalent).
Note 2 — Noise figure measured with diode under test in tuned
diode mount using UHF noise source and local oscillator
(LO) frequency of 1.0 GHz. The LO power is adjusted
for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see
Figure 5.
Note 3 — LS
is measured on a package having a short instead of a
die, using an impedance bridge (Boonton Radio Model
250A RX Meter).
0.2
VR
= 3.0 V
5.0
4.0
7.0
6.0
9.0
8.0
10
LOCAL OSCILLATOR FREQUENCY = 1.0 GHz
(TEST CIRCUIT IN FIGURE 5)
TA
= 25
°C
TA
= ?40
°C
TA
= 85
°C
NF, NOISE FIGURE (dB)
C
D
,
CAPACITANCE (pF)
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| MBD110DWT1 | 功能描述:肖特基二极管与整流器 7V 120mW Dual RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBD110DWT1_07 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Dual Schottky Barrier Diodes |
| MBD110DWT1G | 功能描述:肖特基二极管与整流器 7V 120mW Dual Isolated RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBD110DWT1G_07 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Dual Schottky Barrier Diodes |
| MBD110DWT1G_12 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Dual Schottky Barrier Diodes |
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