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| 型号： | MBD110DWT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 103K |
| 描述： | DIODE SCHOTTKY DUAL 7V SOT-363 |
| 产品变化通告： | Product Discontinuation 02/Jan/2007 |
| 标准包装： | 3,000 |
| 二极管类型： | 肖特基 - 2 个独立式 |
| 电压 - 峰值反向(最大)： | 7V |
| 电容@ Vr, F： | 1pF @ 0V，1MHz |
| 功率耗散（最大）： | 120mW |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SOT-363 |
| 包装： | 带卷 (TR) |
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Semiconductor Components Industries, LLC, 2012
September, 2012 ?
Rev. 8
1
Publication Order Number:
MBD110DWT1/D
MBD110DWT1G,
MBD330DWT1G
Dual Schottky Barrier
Diodes
Application circuit designs are moving toward the consolidation of
device count and into smaller packages. The new SOT?363 package is a
solution which simplifies circuit design, reduces device count, and reduces
board space by putting two discrete devices in one small six?leaded
package. The SOT?363 is ideal for low?power surface mount applications
where board space is at a premium, such as portable products.
Surface Mount Comparisons:
SOT?363
SOT?23
Area (mm2)
4.6
7.6
Max Package PD
(mW)
120
225
Device Count
2
1
Space Savings:
Package
1 x SOT?23
2 x SOT?23
SOT?363
40%
70%
The MBD110DW and MBD330DW devices are spin?offs of our
popular MMBD101LT1 and MMBD301LT1 SOT?23 devices. They are
designed for high?efficiency UHF and VHF detector applications. Readily
available to many other fast switching RF and digital applications.
Features
?
Extremely Low Minority Carrier Lifetime
?
Very Low Capacitance
?
Low Reverse Leakage
?
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage MBD110DWT1G
MBD330DWT1G
VR
7.0
30
V
Forward Current (DC) MBD330DWT1G
IF
200 Max
mA
Forward Power Dissipation TA
= 25
°C
PF
120
mW
Junction Temperature
TJ
?55 to +125
°C
Storage Temperature Range
Tstg
?55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
SC?88 / SOT?363
CASE 419B
STYLE 6
MARKING DIAGRAM
Anode 1 6 Cathode
Cathode 3 4 Anode
N/C 2 5 N/C
xx M
xx = Device Code
Refer to Ordering Table,
page 2
M = Date Code
= Pb?Free Package
(Note: Microdot may be in either location)
1
6
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
1
相关PDF资料 |
PDF描述 |
|---|---|
| MBD54DWT1G | DIODE SCHOTTKY DUAL 30V SOT-363 |
| MBR10100CTP | DIODE SCHOTTKY 10A 100V TO220-3 |
| MBR1060CT | DIODE SCHOTTKY 10A 60V TO220-3 |
| MBR1090CT-E3/45 | DIODE SCHOTT 10A 90V DUAL TO220 |
| MBR10H100CTG | DIODE SCHOTTKY 10A 100V TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBD110DWT1G_07 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Dual Schottky Barrier Diodes |
| MBD110DWT1G_12 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Dual Schottky Barrier Diodes |
| MBD14 | 功能描述:ACCY MOUNT BMM 3/4" TFX RoHS:是 类别:RF/IF 和 RFID >> RF配件 系列:* 标准包装:1 系列:* |
| MBD-153-AL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Low TCR, 1mW Dual Rejustor⑩ Micro-Resistor |
| MBD-153-KL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Low TCR, 1mW Dual Rejustor⑩ Micro-Resistor |
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