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| 型号： | MBD110DWT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 103K |
| 描述： | DIODE SCHOTTKY DUAL 7V SOT-363 |
| 产品变化通告： | Product Discontinuation 02/Jan/2007 |
| 标准包装： | 3,000 |
| 二极管类型： | 肖特基 - 2 个独立式 |
| 电压 - 峰值反向(最大)： | 7V |
| 电容@ Vr, F： | 1pF @ 0V，1MHz |
| 功率耗散（最大）： | 120mW |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SOT-363 |
| 包装： | 带卷 (TR) |
MBD110DWT1G, MBD330DWT1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(IR
= 10
A) MBD110DWT1G
MBD330DWT1G
V(BR)R
7.0
30
10
?
?
?
V
Diode Capacitance
(VR
= 0, f = 1.0 MHz, Note 1) MBD110DWT1G
CD
?
0.88
1.0
pF
Total Capacitance
(VR
= 15 Volts, f = 1.0 MHz) MBD330DWT1G
CT
?
0.9
1.5
pF
Reverse Leakage
(VR
= 3.0 V) MBD110DWT1G
(VR
= 25 V) MBD330DWT1G
IR
?
?
0.02
13
0.25
200
A
nA
Noise Figure
(f = 1.0 GHz, Note 2) MBD110DWT1G
NF
?
6.0
?
dB
Forward Voltage
(IF
= 10 mA) MBD110DWT1G
(IF
= 1.0 mA) MBD330DWT1G
(IF
= 10 mA)
VF
?
?
?
0.5
0.38
0.52
0.6
0.45
0.6
V
ORDERING INFORMATION
Device
Marking
Package
Shipping?
MBD110DWT1G
M4
SC?88 / SOT?363
(Pb?Free)
3000 Units / Tape & Reel
MBD330DWT1G
T4
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBD110DWT1G_07 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Dual Schottky Barrier Diodes |
| MBD110DWT1G_12 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Dual Schottky Barrier Diodes |
| MBD14 | 功能描述:ACCY MOUNT BMM 3/4" TFX RoHS:是 类别:RF/IF 和 RFID >> RF配件 系列:* 标准包装:1 系列:* |
| MBD-153-AL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Low TCR, 1mW Dual Rejustor⑩ Micro-Resistor |
| MBD-153-KL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Low TCR, 1mW Dual Rejustor⑩ Micro-Resistor |
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