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| 型号： | MBD54DWT1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/4页 |
| 文件大小： | 130K |
| 描述： | DIODE SCHOTTKY DUAL 30V SOT363 |
| 产品变化通告： | Product Discontinuation 27/Jun/2007 |
| 标准包装： | 10 |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1V @ 100mA |
| 电流 - 在 Vr 时反向漏电： | 2µA @ 25V |
| 电流 - 平均整流 (Io)（每个二极管）： | 200mA（DC） |
| 电压 - (Vr)（最大）： | 30V |
| 反向恢复时间(trr)： | 5ns |
| 二极管类型： | 肖特基 |
| 速度： | 小信号 =< 200mA（Io），任意速度 |
| 二极管配置： | 2 个独立式 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SOT-363 |
| 包装： | 剪切带 (CT) |
| 其它名称： | MBD54DWT1OSCT |
?
Semiconductor Components Industries, LLC, 2009
October, 2009 ?
Rev. 7
1
Publication Order Number:
MBD54DWT1/D
MBD54DWT1G
Preferred Device
Dual Schottky Barrier
Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
?
Extremely Fast Switching Speed
?
Low Forward Voltage ?
0.35 V @ I
F
= 10 mAdc
?
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(TJ
= 125
°C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
30
V
Forward Power Dissipation
@ TA
= 25
°C
Derate above 25°C
PF
150
1.2
mW
mW/°C
Forward Current (DC)
IF
200 Max
mA
Junction Temperature
TJ
125 Max
°C
Storage Temperature Range
Tstg
?55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING
DIAGRAM
SOT?363
CASE 419B
STYLE 6
http://onsemi.com
30 VOLTS
DUAL HOT?CARRIER
DETECTOR AND SWITCHING
DIODES
Anode 1 6 Cathode
Cathode 3 4 Anode
N/C 2 5 N/C
BL M
1
6
Device Package Shipping?
ORDERING INFORMATION
MBD54DWT1G SOT?363
(Pb?Free)
3000 /
Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
1
M = Date Code
= Pb?Free Package
(Note: Microdot may be in either location)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBD54DWT1D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Dual Schottky Barrier Diodes |
| MBD54DWT1G | 功能描述:肖特基二极管与整流器 30V 150mW Dual Isolated RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBD54DWT1G | 制造商:ON Semiconductor 功能描述:Schottky Rectifier |
| MBD54DWT1G_09 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Dual Schottky Barrier Diodes |
| MBD5A | 功能描述:基本/快动开关 SPST-NO OFF-MOM 10A 250VAC 274gf RoHS:否 制造商:Omron Electronics 触点形式:SPDT 执行器:Lever 电流额定值:5 A 电压额定值 AC:250 V 电压额定值 DC:30 V 功率额定值: 工作力:120 g IP 等级:IP 67 NEMA 额定值: 端接类型:Wire 安装:Panel |
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