参数资料
型号: MBD770DWT1
厂商: MOTOROLA INC
元件分类: 参考电压二极管
英文描述: Dual Schottky Barrier Diodes
中文描述: SILICON, VHF-UHF BAND, MIXER DIODE
文件页数: 2/8页
文件大小: 180K
代理商: MBD770DWT1
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(IR = 10
μ
A)
MBD110DWT1
MBD330DWT1
MBD770DWT1
V(BR)R
7.0
30
70
10
Volts
Diode Capacitance
(VR = 0, f = 1.0 MHz, Note 1)
MBD110DWT1
CT
0.88
1.0
pF
Total Capacitance
(VR = 15 Volts, f = 1.0 MHz)
(VR = 20 Volts, f = 1.0 MHz)
MBD330DWT1
MBD770DWT1
CT
0.9
0.5
1.5
1.0
pF
Reverse Leakage
(VR = 3.0 V)
(VR = 25 V)
(VR = 35 V)
Noise Figure
(f = 1.0 GHz, Note 2)
MBD110DWT1
MBD330DWT1
MBD770DWT1
IR
0.02
13
9.0
0.25
200
200
μ
A
nAdc
nAdc
MBD110DWT1
NF
6.0
dB
Forward Voltage
(IF = 10 mA)
(IF = 1.0 mAdc)
(IF = 10 mA)
(IF = 1.0 mAdc)
(IF = 10 mA)
MBD110DWT1
MBD330DWT1
MBD770DWT1
VF
0.5
0.38
0.52
0.42
0.7
0.6
0.45
0.6
0.5
1.0
Vdc
相关PDF资料
PDF描述
MBD770DWT1 Dual Schottky Barrier Diodes
MBD330D Dual Schottky Barrier Diodes
MBD110DWT1 Dual Schottky Barrier Diodes
MBD330DWT1 Dual Schottky Barrier Diodes
MBD110DWT1 Dual SCHOTTKY Barrier Diodes
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