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参数资料
| 型号： | MBD770DWT1 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 参考电压二极管 |
| 英文描述： | Dual Schottky Barrier Diodes |
| 中文描述： | SILICON, VHF-UHF BAND, MIXER DIODE |
| 文件页数： | 3/8页 |
| 文件大小： | 180K |
| 代理商： | MBD770DWT1 |
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL CHARACTERISTICS
MBD110DWT1
Figure 1. Reverse Leakage
TA, AMBIENT TEMPERATURE (
°
C)
Figure 2. Forward Voltage
VF, FORWARD VOLTAGE (VOLTS)
Figure 3. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Noise Figure
PLO, LOCAL OSCILLATOR POWER (mW)
C
N
,
I
,
I
0.1
0.2
0.5
1.0
2.0
5.0
10
11
10
9
8
7
6
5
4
3
2
1
0
1.0
2.0
3.0
4.0
1.0
0.9
0.8
0.7
0.6
0.3
0.4
0.5
0.6
100
10
1.0
0.1
0.7
0.8
30
40
50
60
70
80
100
1.0
0.7
0.5
130
110
120
90
0.2
0.1
0.07
0.05
0.02
0.01
Figure 5. Noise Figure Test Circuit
LOCAL
OSCILLATOR
UHF
NOISE SOURCE
H.P. 349A
NOISE
FIGURE METER
H.P. 342A
DIODE IN
TUNED
MOUNT
IF AMPLIFIER
NF = 1.5 dB
f = 30 MHz
VR = 3.0 Vdc
LOCAL OSCILLATOR FREQUENCY = 1.0 GHz
(Test Circuit Figure 5)
TA = –40
°
C
TA = 85
°
C
TA = 25
°
C
Note 3 – LS is measured on a package having a short instead
of a die, using an impedance bridge (Boonton Radio
Model 250A RX Meter).
Note 1 – CC and CT are measured using a capacitance
bridge (Boonton Electronics Model 75A or equiva-
lent).
Note 2 – Noise figure measured with diode under test in
tuned diode mount using UHF noise source and lo-
cal oscillator (LO) frequency of 1.0 GHz. The LO
power is adjusted for 1.0 mW. IF amplifier NF = 1.5
dB, f = 30 MHz, see Figure 5.
NOTES ON TESTING AND SPECIFICATIONS
MBD110DWT1
MBD110DWT1
MBD110DWT1
MBD110DWT1
相关PDF资料 |
PDF描述 |
|---|---|
| MBD770DWT1 | Dual Schottky Barrier Diodes |
| MBD330D | Dual Schottky Barrier Diodes |
| MBD110DWT1 | Dual Schottky Barrier Diodes |
| MBD330DWT1 | Dual Schottky Barrier Diodes |
| MBD110DWT1 | Dual SCHOTTKY Barrier Diodes |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBD770DWT1G | 功能描述:肖特基二极管与整流器 70V 120mW Dual Isolated RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBD-902-AL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Low TCR, 1mW Dual Rejustor⑩ Micro-Resistor |
| MBD-902-CL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Low TCR, 1mW Dual Rejustor⑩ Micro-Resistor |
| MBD-902-XL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Low TCR, 1mW Dual Rejustor⑩ Micro-Resistor |
| MBD-A1SAM-2750F-B | 制造商:Supermicro Computer Inc 功能描述:INTEL MOTHERBOARD - Trays |
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