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参数资料
| 型号： | MBM200GR12A |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 200 A, 1200 V, N-CHANNEL IGBT |
| 文件页数： | 3/4页 |
| 文件大小： | 128K |
| 代理商： | MBM200GR12A |
PDE-M200GR12A-0
1.5
1
0.5
0
100
200
300
TYPICAL
Switching
Time
,t
(
s)
Collector Current, IC (A)
Switching time vs. Collector current
ton
toff
Vcc
=600V
VGE
=±15V
RG
=6.2
TC
=25°C
Inductive Load
tr
tf
TYPICAL
10
1
0.01
0.1
1
10
100
Switching
Time
,t
(
s)
Gate Resistance, RG (
)
Switching time vs. Gate resistance
ton
toff
tf
tr
VCC
=600V
VGE
=±15V
IC
=200A
TC
=25°C
Inductive Load
TYPICAL
40
30
20
10
0
100
200
300
Switching
Loss
,Et
on
,Et
off
,E
rr
(mJ/pulse)
Collector Current. IC (A)
Switching loss vs. Collector current
Err
Eton
Etoff
VCC
=600V
VGE
=±15V
RG
=6.2
TC
=125°C
Inductive Load
TYPICAL
100
10
1
0.1
1
10
100
Switching
Loss
,Et
on
,Et
off
,E
rr
(mJ/pulse)
Gate Resistance. RG (
)
Switching loss vs. Gate resistance
VCC
=600V
VGE
=±15V
IC
=200A
TC
=125°C
Inductive Load
Etoff
Err
Eton
10000
1000
100
10
1
0
200
400
600
800
1000
1200
1400
Collector
Current,
Ic
(A)
Collector to Emitter Voltage, VCE (V)
Reverse biased safe operating area
VGE
=±15V
RG
=6.2
TC
≤125°C
1
0.1
0.01
0.001
0.01
0.1
1
10
T
ransient
Ther
mal
Impedance
,R
th(j-c)
(
°C/W
)
Time, t (s)
Transient thermal impedance
Diode
IGBT
相关PDF资料 |
PDF描述 |
|---|---|
| MBM200GR12A | 200 A, 1200 V, N-CHANNEL IGBT |
| MBM200GS6AW | 200 A, 600 V, N-CHANNEL IGBT |
| MBM300GS6AW | 300 A, 600 V, N-CHANNEL IGBT |
| MBM400GR6 | 400 A, 600 V, N-CHANNEL IGBT |
| MBN1200D25B | 1200 A, 2500 V, N-CHANNEL IGBT |
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