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参数资料
| 型号： | MBM200GR12A |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 200 A, 1200 V, N-CHANNEL IGBT |
| 文件页数： | 4/4页 |
| 文件大小： | 128K |
| 代理商： | MBM200GR12A |
1.The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are adviced to contact Hitachi sales department for the latest version of this
data sheets.
2.Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure
before use.
3.In cases where extremely high reliability is required(such as use in nuclear power control,
aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel
control equipment and various kinds of safety equipment), safety should be ensured by
using semiconductor devices that feature assured safety or by means of users’ fail-safe
precautions or other arrangement. Or consult Hitachi’s sales department staff.
4.In no event shall Hitachi be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to this data sheets. Hitachi
assumes no responsibility for any intellectual property claims or any other problems that
may result from applications of information, products or circuits described in this data
sheets.
5.In no event shall Hitachi be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
6.No license is granted by this data sheets under any patents or other rights of any third
party or Hitachi, Ltd.
7.This data sheets may not be reproduced or duplicated, in any form, in whole or in part ,
without the expressed written permission of Hitachi, Ltd.
8.The products (technologies) described in this data sheets are not to be provided to any
party whose purpose in their application will hinder maintenance of international peace
and safety not are they to be applied to that purpose by their direct purchasers or any
third party. When exporting these products (technologies), the necessary procedures are
to be taken in accordance with related laws and regulations.
HITACHI POWER SEMICONDUCTORS
For inquiries relating to the products, please contact nearest overseas representatives which is located
“Inquiry” portion on the top page of a home page.
Notices
Hitachi power semiconductor home page address
http://www.hitachi.co.jp/pse
相关PDF资料 |
PDF描述 |
|---|---|
| MBM200GR12A | 200 A, 1200 V, N-CHANNEL IGBT |
| MBM200GS6AW | 200 A, 600 V, N-CHANNEL IGBT |
| MBM300GS6AW | 300 A, 600 V, N-CHANNEL IGBT |
| MBM400GR6 | 400 A, 600 V, N-CHANNEL IGBT |
| MBN1200D25B | 1200 A, 2500 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBM200GR6 | 制造商:n/a 功能描述:IGBT Module |
| MBM-2105G | 制造商: 功能描述: 制造商:GLDSTR 功能描述: 制造商:GOLDSTAR 功能描述: 制造商:undefined 功能描述: |
| MBM2149-45 | 制造商:FUGITSU 功能描述:2149-45 |
| MBM2212-20 | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:MOS 1024 BIT NON VOLATILE RANDOM ACCESS MEMORY |
| MBM2212-25 | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:MOS 1024 BIT NON VOLATILE RANDOM ACCESS MEMORY |
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