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参数资料
| 型号： | MBM200GR6 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 200 A, 600 V, N-CHANNEL IGBT |
| 文件页数： | 2/4页 |
| 文件大小： | 67K |
| 代理商： | MBM200GR6 |
PDE-M200GR6-0
VGE
=15V14V13V
300
400
02
4
6
8
10
200
100
0
11V
12V
TYPICAL
10V
9V
Tc
=25°C
Collector
Current,
Ic
(A)
Collector to Emitter Voltage, VCE (V)
Collector current vs. Collector to Emitter voltage
Pc
=690W
VGE
=15V14V13V
400
02
4
6
8
10
200
300
100
0
11V
12V
TYPICAL
10V
9V
Tc
=125°C
Collector
Current,
Ic
(A)
Collector to Emitter Voltage, VCE (V)
Collector current vs. Collector to Emitter voltage
Ic
=200A
Ic
=400A
10
8
6
4
2
0
5
10
15
20
TYPICAL
Collector
to
Emitter
V
oltage,
V
CE
(V)
Gate to Emitter Voltage, VGE (V)
Collector to Emitter voltage vs. Gate to Emitter voltage
Tc
=25°C
Ic
=400A
Ic
=200A
10
8
6
4
2
0
5
10
15
20
TYPICAL
Collector
to
Emitter
V
oltage,
V
CE
(V)
Gate to Emitter Voltage, VGE (V)
Collector to Emitter voltage vs. Gate to Emitter voltage
Tc
=125°C
400
300
200
100
0
1
234
5
TYPICAL
F
orward
Current
IF
(A)
Forward Voltage, VF (V)
Forward voltage of free-wheeling diode
VGE
=0
Tc
=25°C
Tc
=125°C
20
15
10
5
0
200
400
600
800
TYPICAL
Vcc
=300V
Ic
=200A
Tc
=25°C
Gate
to
Emitter
V
oltage,
V
GE
(V)
Gate Charge, QG (nC)
Gate charge characteristics
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