- 您现在的位置：买卖IC网 > PDF目录97599 > MBM200GR6 200 A, 600 V, N-CHANNEL IGBT PDF资料下载
参数资料
| 型号： | MBM200GR6 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 200 A, 600 V, N-CHANNEL IGBT |
| 文件页数： | 3/4页 |
| 文件大小： | 67K |
| 代理商： | MBM200GR6 |
PDE-M200GR6-0
1.5
1
0.5
0
50
100
150
200
250
300
TYPICAL
Switching
Time,
t
(
s)
Collector Current, IC (A)
Switching time vs. Collector current
ton
toff
Vcc
=300V
VGE
=±15V
RG
=12
TC
=25°C
Resistive Load
tr
tf
TYPICAL
10
100
1
0.1
1
10
100
Switching
Time,
t
(
s)
Gate Resistance, RG (
)
Switching time vs. Gate resistance
ton
toff
VCC
=300V
VGE
=±15V
IC
=200A
TC
=25°C
Resistive Load
tf
tr
TYPICAL
20
15
10
5
0
50
100
150
200
250
300
Switching
Loss,
Et
on
,Et
off
,E
rr
(mJ/pulse)
Collector Current. IC (A)
Switching loss vs. Collector current
Err
Eton
Etoff
VCC
=300V
VGE
=±15V
RG
=12
TC
=125°C
Inductive Load
TYPICAL
100
10
1
0.1
1
10
100
Switching
Loss,
Et
on
,Et
off
,E
rr
(mJ/pulse)
Gate Resistance. RG (
)
Switching loss vs. Gate resistance
VCC
=300V
VGE
=±15V
IC
=200A
TC
=125°C
Inductive Load
Etoff
Err
Eton
10000
1000
100
10
1
0
200
400
600
Collector
Current,
Ic
(A)
Collector to Emitter Voltage, VCE (V)
Reverse biased safe operating area
VGE
=±15V
RG
=12
TC
≤125°C
1
0.1
0.01
0.001
0.01
0.1
1
10
T
ransient
Thermal
Impedance,
R
th(j-c)
(
°C/W)
Time, t (s)
Transient thermal impedance
Diode
IGBT
相关PDF资料 |
PDF描述 |
|---|---|
| MBM200GS12EBW | IGBT |
| MBM200GS12EBW | IGBT |
| MBM300GR12A | 300 A, 1200 V, N-CHANNEL IGBT |
| MBR1090CT | 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR2070CT | 20 A, 70 V, SILICON, RECTIFIER DIODE, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBM-2105G | 制造商: 功能描述: 制造商:GLDSTR 功能描述: 制造商:GOLDSTAR 功能描述: 制造商:undefined 功能描述: |
| MBM2149-45 | 制造商:FUGITSU 功能描述:2149-45 |
| MBM2212-20 | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:MOS 1024 BIT NON VOLATILE RANDOM ACCESS MEMORY |
| MBM2212-25 | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:MOS 1024 BIT NON VOLATILE RANDOM ACCESS MEMORY |
| mbm27128-20 | 制造商:FUJITSU 功能描述:MBM27128-20 |
发布紧急采购，3分钟左右您将得到回复。