参数资料
型号: MBM29DL32TF70TN
厂商: FUJITSU LTD
元件分类: PROM
英文描述: 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
封装: PLASTIC, TSOP1-48
文件页数: 16/70页
文件大小: 862K
代理商: MBM29DL32TF70TN
MBM29DL32TF/BF-70
23
Common Flash Memory Interface Code Table
(Continued)
DQ15 to DQ0
A6 to A0
Description
0051h
0052h
0059h
10h
11h
12h
Query-unique ASCII string “QRY”
0002h
0000h
13h
14h
Primary OEM Command Set
02h : AMD/FJ standard type
0040h
0000h
15h
16h
Address for Primary Extended Table
0000h
17h
18h
Alternate OEM Command Set
(00h
= not applicable)
0000h
19h
1Ah
Address for Alternate OEM Extended Table
0027h
1Bh
VCC Min voltage (write/erase) DQ7 to DQ4 : 1 V, DQ3 to DQ0 : 100 mV
0036h
1Ch
VCC Max voltage (write/erase) DQ7 to DQ4 : 1 V, DQ3 to DQ0 : 100 mV
0000h
1Dh
VPP Min voltage
0000h
1Eh
VPP Max voltage
0004h
1Fh
Typical timeout per word write 2N
s
0000h
20h
Typical timeout for buffer write 2N
s
000Ah
21h
Typical timeout per individual sector erase 2N ms
0000h
22h
Typical timeout for full chip erase 2N ms
0005h
23h
Max timeout for byte/word write 2N times typical
0000h
24h
Max timeout for buffer write 2N times typical
0004h
25h
Max timeout per individual sector erase 2N times typical
0000h
26h
Max timeout for full chip erase 2N times typical
0016h
27h
Device Size
= 2N byte
0002h
0000h
28h
29h
I/O information
Flash Device Interface description 02h :
×8/×16
0000h
2Ah
2Bh
Max number of bytes in multi-byte write
= 2N
0002h
2Ch
Number of Erase Block Regions within device
0007h
0000h
0020h
0000h
2Dh
2Eh
2Fh
30h
Erase Block Region 1 Information
bit 15 to bit 0 : y
= number of sectors
bit 31 to bit 16 : z
= size
(z
× 256 bytes)
003Eh
0000h
0001h
31h
32h
33h
34h
Erase Block Region 2 Information
bit 15 to bit 0 : y
= number of sectors
bit 31 to bit 16 : z
= size
(z
× 256 bytes)
0050h
0052h
0049h
40h
41h
42h
Query-unique ASCII string “PRI”
0031h
43h
Major version number, ASCII
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