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参数资料
| 型号： | MBM29DL32TF70TN |
| 厂商： | FUJITSU LTD |
| 元件分类： | PROM |
| 英文描述： | 2M X 16 FLASH 3V PROM, 70 ns, PDSO48 |
| 封装： | PLASTIC, TSOP1-48 |
| 文件页数： | 24/70页 |
| 文件大小： | 862K |
| 代理商： | MBM29DL32TF70TN |
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MBM29DL32TF/BF-70
30
s COMMAND DEFINITIONS
Device operations are selected by writing specific address and data sequences into the command register.
Some commands are required Bank Address (BA) input. When command sequences are inputted to bank being
read, the commands have priority than reading. “MBM29DL32TF/BF Command Definitions Table” in sDEVICE
BUS OPERATION defines the valid register command sequences. Note that the Erase Suspend (B0h) and Erase
Resume (30h) commands are valid only while the Sector Erase operation is in progress. Also the Program
Suspend (B0h) and Program Resume (30h) commands are valid only while the Program operation is in progress.
Moreover both Read/Reset commands are functionally equivalent, resetting the device to the read mode. Please
note that commands are always written at DQ7 to DQ0 and DQ15 to DQ8 bits are ignored.
1.
Read/Reset Command
In order to return from Autoselect mode or Exceeded Timing Limits (DQ5
= 1) to Read/Reset mode, the Read/
Reset operation is initiated by writing the Read/Reset command sequence into the command register. Micro-
processor read cycles retrieve array data from the memory. The devices remain enabled for reads until the
command register contents are altered.
The devices will automatically power-up in the Read/Reset state. In this case, a command sequence is not
required to read data. Standard microprocessor read cycles will retrieve array data. This default value ensures
that no spurious alteration of the memory content occurs during the power transition. Refer to the AC Charac-
teristics and waveforms for the specific timing parameters.
2.
Autoselect Command
Flash memories are intended for use in applications where the local CPU alters memory contents. As such,
manufacture and device codes must be accessible while the devices reside in the target system. PROM pro-
grammers typically access the signature codes by raising A9 to a high voltage. However, multiplexing high voltage
onto the address lines is not generally desired system design practice.
The device contains an Autoselect command operation to supplement traditional PROM programming method-
ology. The operation is initiated by writing the Autoselect command sequence into the command register.
The Autoselect command sequence is initiated by first writing two unlock cycles. This is followed by a third write
cycle that contains the bank address (BA) and the Autoselect command. Then the manufacture and device
codes can be read from the bank, and an actual data of memory cell can be read from the another bank.
Following the command write, in WORD mode, a read cycle from address (BA) 00h returns the manufacturer’s
code (Fujitsu
= 04h) . And a read cycle at address (BA) 01h outputs device code. When 227Eh was output, this
indicates that two additional codes, called Extended Device Codes will be required. Therefore the system may
continue reading out these Extended Device Codes at the address of (BA) 0Eh, as well as at (BA) 0Fh. Notice
that the above applies to WORD mode. The addresses and codes differ from those of BYTE mode. (Refer to
“MBM29DL32TF/BF Sector Group Protection Verify Autoselect Codes Tables” and “MBM29DL32TF/BF Extend-
ed Autoselect Code Tables” in sDEVICE BUS OPERATION.)
All manufacturer and device codes will exhibit odd parity with DQ7 defined as the parity bit. Sector state (protection
or unprotection) will be informed by address (BA) 02h for
×16 ( (BA) 04h for ×8). Scanning the sector group
addresses (A20, A19, A18, A17, A16, A15, A14, A13, and A12) while (A6, A3, A2, A1, A0)
= (0, 0, 0, 1, 0) will produce a
logic “1” at device output DQ0 for a protected sector group. The programming verification should be performed
by verify sector group protection on the protected sector. (See “MBM29DL32TF/BF Sector Group Protection
Verify Autoselect Codes Tables” and “MBM29DL32TF/BF Extended Autoselect Code Tables” in sDEVICE BUS
OPERATION.)
The manufacture and device codes can be allowed reading from selected bank. To read the manufacture and
device codes and sector group protection status from non-selected bank, it is necessary to write Read/Reset
command sequence into the register and then Autoselect command should be written into the bank to be read.
If the software (program code) for Autoselect command is stored into the Flash memory, the device and manu-
facture codes should be read from the other bank where is not contain the software.
To terminate the operation, it is necessary to write the Read/Reset command sequence into the register, and
also to write the Autoselect command during the operation, execute it after writing Read/Reset command se-
quence.
3.
Byte/Word Programming
The devices are programmed on a byte-by-byte (or word-by-word) basis. Programming is a four bus cycle
operation. There are two “unlock” write cycles. These are followed by the program set-up command and data
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