- 您现在的位置：买卖IC网 > PDF目录95881 > MBN1200D33A 1200 A, 3300 V, N-CHANNEL IGBT PDF资料下载
参数资料
| 型号： | MBN1200D33A |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 1200 A, 3300 V, N-CHANNEL IGBT |
| 文件页数： | 1/4页 |
| 文件大小： | 68K |
| 代理商： | MBN1200D33A |
PDE-N1200D33A-0
IGBT MODULE
MBN1200D33A
Silicon N-channel IGBT
OUTLINE DRAWING
FEATURES
* High thermal fatigue durability.
(delta Tc=70
°C,N>20,000cycles)
* low noise due to built-in free-wheeling
diode - ultra soft fast recovery diode(USFD).
*High speed,low loss IGBT module.
*Low driving power due to low input
capacitance MOS gate.
*High reliability,high durability module.
* Isolated head sink (terminal to base).
ABSOLUTE MAXIMUM RATINGS (Tc=25
°C )
Item
Symbol
Unit
MBN1200D33A
Collector Emitter Voltage
VCES
V
3,300
Gate Emitter Voltage
VGES
V
±20
Collector Current
DC
IC
1,200
1ms
ICp
A
2,400
Forward Current
DC
IF
1,200
1ms
IFM
A
2,400
Collector Power Dissipation
Pc
W
12,000
Junction Temperature
Tj
°C
-40 ~ +125
Storage Temperature
Tstg
°C
-40 ~ +125
Isolation Voltage
VISO
VRMS
5,400(AC 1 minute)
Screw Torque
Terminals(M4/M8)
-
2/10
(1)
Mounting(M6)
-
N.m
6
(2)
Notes: (1)Recommended Value 1.8
±0.2/9±1N.m
(2)Recommended Value 5.5
±0.5N.m
CHARACTERISTICS
(Tc=25
°C )
Item
Symbol
Unit
Min.
Typ.
Max.
Test Conditions
Collector Emitter Cut-Off Current
I CES
mA
-
12.0
VCE=3,300V,VGE=0V
Gate Emitter Leakage Current
IGES
nA
-
±500 VGE=±20V,VCE=0V
Collector Emitter Saturation Voltage
VCE(sat)
V-
4.1
5.0
IC=1,200A,VGE=15V
Gate Emitter Threshold Voltage
VGE(TO)
V
4.0
5.5
7.0
VCE=10V, IC =1,200mA
Input Capacitance
Cies
nF
-
150
-
VCE=10V,VGE=0V,f=100KHz
Rise Time
tr
-1.6
2.6
VCC=1,650V,Ic=1,200A
Turn On Time
ton
-
2.3
3.2
L=100nH
Fall Time
tf
-
2.4
3.2
RG=3.3
W
(3)
Switching Times
Turn Off Time
toff
ms
-3.9
5.6
VGE=
±15V Tc=125°C
Peak Forward Voltage Drop
VFM
V-
2.8
3.7
-Ic=1,200A,VGE=0V
Reverse Recovery Time
trr
ms
-
0.8
1.4
Vcc=1,650V,
-Ic=1,200A,L=100nH,
Tc=125
°C (4)
IGBT
Rth(j-c)
-
0.008
Thermal Impedance
FWD
Rth(j-c)
°C/W
-
0.016
Junction to case
Notes:(3)
RG value is the test condition’s value for decision of the switching times, not recommended value.
Determine the suitable RG value after the measurement of switching waveforms
(overshoot voltage,etc.)with appliance mounted.
(4) Counter arm IGBT
VGE=
-15V
Unit in mm
Weight: 1,200 (g)
TERMINALS
G
E
EEE
C
CCC
6-M8
3-M4
8-
φ7
相关PDF资料 |
PDF描述 |
|---|---|
| MBN1200D33C | 1200 A, 3300 V, N-CHANNEL IGBT |
| MBN1200E33C | 1200 A, 3300 V, N-CHANNEL IGBT |
| MBN1200GR12A | 1200 A, 1200 V, N-CHANNEL IGBT |
| MBN1200GR12A | 1200 A, 1200 V, N-CHANNEL IGBT |
| MBN1200GR17 | IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBN2.25SV | 功能描述:Tubular Ground Braid 2.250" (57.15mm, 2 1/4") - Outer Dia X 100' (30.5m) 30 AWG 制造商:techflex 系列:金属编织型 零件状态:有效 类型:管状 材料:镀锡铜 尺寸（出厂）:2.250"（57.15mm，2 1/4"） - 外径 厚度:0.025"（0.64mm） 载体数:48 线规 - 端:30 AWG 长度:100'（30.5m） 标准包装:1 |
| MBN2.25SV50 | 功能描述:Tubular Ground Braid 2.250" (57.15mm, 2 1/4") - Outer Dia X 50.0' (15.24m) 30 AWG 制造商:techflex 系列:金属编织型 零件状态:有效 类型:管状 材料:镀锡铜 尺寸（出厂）:2.250"（57.15mm，2 1/4"） - 外径 厚度:0.025"（0.64mm） 载体数:48 线规 - 端:30 AWG 长度:50.0'（15.24m） 标准包装:1 |
| MBN200A6 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:IGBT MODULE RANGE WITH SOFT AND FAST (SFD) FREE-WHEELING DIODES |
| MBN200F12 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:IGBT MODULE RANGE WITH SOFT AND FAST (SFD) FREE-WHEELING DIODES |
| MBN300F12 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:IGBT MODULE RANGE WITH SOFT AND FAST (SFD) FREE-WHEELING DIODES |
发布紧急采购，3分钟左右您将得到回复。