参数资料
型号: MBN1200D33A
元件分类: IGBT 晶体管
英文描述: 1200 A, 3300 V, N-CHANNEL IGBT
文件页数: 3/4页
文件大小: 68K
代理商: MBN1200D33A
PDE-N1200D33A-0
Eoff(full)
Eoff(10%)
T
u
rn-off
Loss
Eoff
(J/pulse)
Collector Current IC (A)
Turn-off Loss vs. Collector Current
Reverse Recovery Loss vs. Collector Current
2.5
2.0
1.5
1.0
0.5
0
500
1000
1500
0.0
TYPICAL
0.001
0.01
1
10
0.1
0.0001
0.001
0.01
0.1
[Conditions]
Tc
=125°C
VCC
=1650V
Lp
≈100nH
RG
=3.3
VGE
=±15V
Inductive Load
Err(full)
Err(10%)
Re
v
erse
Reco
v
e
ry
Loss
Err
(J/pulse)
Collector Current IC (A)
2.5
2.0
1.0
1.5
0.5
0
1000
500
1500
0.0
TYPICAL
[Conditions]
Tc
=125°C
VCC
=1650V
Lp
≈100nH
RG
=3.3
VGE
=±15V
Inductive Load
T
ransient
Ther
mal
Impedance
,R
th(j-c)
(
°C/W
)
Time, t (s)
Transient thermal impedance
Diode
IGBT
t9
t11
t12
10%
IRM
0.1 IRM
IC
IC VCE dt
Err(10%)
=
Err(full)
=
VCE
t
0
t10
.
t5
t7
t8
0
10%
VGE
IC
IC VCE dt
Eoff(10%)
=
Eoff(full)
=
VCE
0
t6
t
t6
.
相关PDF资料
PDF描述
MBN1200D33C 1200 A, 3300 V, N-CHANNEL IGBT
MBN1200E33C 1200 A, 3300 V, N-CHANNEL IGBT
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