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参数资料
| 型号： | MBN1200D33C |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 1200 A, 3300 V, N-CHANNEL IGBT |
| 封装： | MODULE-9 |
| 文件页数： | 2/4页 |
| 文件大小： | 307K |
| 代理商： | MBN1200D33C |
2000
500
1000
1500
Switching
Time,
td(on),
tr,
td(off),
tf,trr
(m
s)
Forward
Current,
I
F(A)
Collector Current, IC (A)
Switching time vs. Collector current
Forward Voltage, VF (V)
Forward voltage of free-wheeling diode
Collector to Emitter Voltage, VCE (V)
Capacitance vs. Collector to Emitter Voltage
PDE-N1200D33C-1
0
500
1000
1500
3.5
2.5
3.0
2.0
1.0
1.5
0.0
0.5
TYPICAL
Turn-on
Loss
Eon
(J/pulse)
Collector Current, IC (A)
Turn-on Loss vs. Collector Current
3.0
1.5
2.0
2.5
1.0
0.5
0
500
1500
1000
0
TYPICAL
0
1
3
4
2
5
0
TYPICAL
VGE
=0V
Tc
=25°C
Tc
=125°C
[Conditions]
VGE
=±15V, RG=3.3W
VCC
=1650V, Lp@100nH,
TC
=125°C, Inductive Load
Cies,
Coes,
Cres(nF)
trr
td(on)
td(off)
tf
tr
Eon(full)
Eon(10%)
t1
t3
t4
0
10%
VGE
IC
IC VCE dt
Eon(10%)
=
Eon(full)
=
VCE
0
t2
.
2000
0
4
2
6
8
10
500
1000
1500
0
TYPICAL
Collector
Current,
Ic
(A)
Collector
Current,
Ic
(A)
Collector to Emitter Voltage, VCE (V)
Collector current vs. Collector to Emitter voltage
Collector to Emitter Voltage, VCE (V)
Collector current vs. Collector to Emitter voltage
9V
7V
5V
TC
=25°C
2000
0
4
2
6
8
10
500
1000
1500
0
9V
7V
5V
TYPICAL
TC
=125°C
TYPICAL
1000
100
1
10
100
10
1
0.1
Tc
=25°C
[Conditions]
VCC
=1650V
Lp
@100nH
RG
=3.3W
VGE
=±15V
TC
=125°C
Inductive Load
13V 11V
VGE
=15V
13V
11V
VGE
=15V
Cies
Coes
Cres
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| MBN1200GR12A | 1200 A, 1200 V, N-CHANNEL IGBT |
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