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参数资料
| 型号： | MBN1200D33C |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 1200 A, 3300 V, N-CHANNEL IGBT |
| 封装： | MODULE-9 |
| 文件页数： | 3/4页 |
| 文件大小： | 307K |
| 代理商： | MBN1200D33C |
PDE-N1200D33C-1
Turn-off
Loss
Eoff
(J/pulse)
Collector Current, IC (A)
Turn-off Loss vs. Collector Current
Reverse Recovery Loss vs. Collector Current
2.5
2.0
1.5
1.0
0.5
0
500
1000
1500
0.0
TYPICAL
[Conditions]
TC
=125°C
VCC
=1650V
Lp
@100nH
RG
=3.3W
VGE
=±15V
Inductive Load
Reverse
Recovery
Loss
Err
(J/pulse)
Collector Current, IC (A)
2.5
2.0
1.0
1.5
0.5
0
1000
500
1500
0.0
TYPICAL
[Conditions]
TC
=125°C
VCC
=1650V
Lp
@100nH
RG
=3.3W
VG
=±15V
Inductive Load
TYPICAL
0.001
0.01
1
10
0.1
0.0001
0.001
0.01
0.1
Transient
Thermal
Impedance,
Rth(j-c)
(°
C/W)
Time, t (s)
Transient thermal impedance
Diode
IGBT
4000
1000
2000
3000
Turn-on
Loss,
Eon
(mJ)
Gate Resistance, RG (
W)
Turn-on Loss vs. Gate Resistance
0
6
4
2
8
0
TYPICAL
[Conditions]
VCC
=1650V
IC
=1200A
Tj
=125°C
VG
=±15V
4000
1000
2000
3000
Recovery
Loss,
Err
(mJ/pulse)
Gate Resistance, RG (
W)
Recovery Loss vs. Gate Resistance
0
6
4
2
8
0
TYPICAL
[Conditions]
VCC
=1650V
IC
=1200A
Tj
=125°C
VG
=±15V
4000
1000
2000
3000
Turn-off
Loss,
Eoff
(mJ)
Gate Resistance, RG (
W)
Turn-off Loss vs. Gate Resistance
0
6
4
2
8
0
TYPICAL
[Conditions]
VCC
=1650V
IC
=1200A
Tj
=125°C
VG
=±15V
Eoff(full)
Eon(full)
Eoff(10%)
Eon(10%)
Err(full)
Err(10%)
Eoff(full)
Eoff(10%)
Err(full)
Err(10%)
t9
t11
t12
10%
IRM
0.1 IRM
IC
IC VCE dt
Err(10%)
=
Err(full)
=
VCE
t
0
t10
.
t5
t7
t8
0
10%
VGE
IC
IC VCE dt
Eoff(10%)
=
Eoff(full)
=
VCE
0
t6
t
t6
.
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