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参数资料
| 型号： | MBR10100CTL |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 1/2页 |
| 文件大小： | 120K |
| 代理商： | MBR10100CTL |
MBR10100CTL
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE
– 100 Volts
FORWARD CURRENT
– 10 Amperes
FEATURES
Metal of silicon rectifier, majority carrier conduction
Guard ring for transient protection
Low power loss, high efficiency
High surge¤t capability, low VF
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
MECHANICAL DATA
Case: TO-220AB molded plastic
Plastic package has UL flammability classification
94V-0
Terminals: Matte Tin, solderable per MIL-STD-202
Method 208
Moisture sensitivity: level 1 per J-STD-020D
Lead Free Finish, RoHS Compliant
Polarity: As marked on the body
Weight: 1.85 grams
Mounting position: Any
Max. mounting torque = 0.5 N.m (5.1 Kgf-cm)
TO-220AB
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
PARAMETER
SYMBOL
MBR10100CTL
UNIT
Maximum Repetitive Peak Reverse Voltage
VRRM
100
V
Maximum RMS Voltage
VRMS
71
V
Maximum DC Blocking Voltage
VDC
100
V
Average Rectified Output Current
@Tc=115°C
IF
10
A
Peak Forward Surge Current 8.3ms single half sine-wave
superimposed on rated load
IFSM
120
A
Maximum Forward Voltage
Note(1)
IF=5A@
Tj=25°C
Tj=125°C
VF
0.80
0.71
V
Maximum DC Reverse Current at Rated DC
Blocking Voltage
Tj=25°C
Tj=125°C
IR
0.2
25
mA
Typical thermal resistance Junction to Case
RΘJC
2.0
°C/W
Operating junction temperature range
TJ
-55 to +150
°C
Storage temperature range
TSTG
-55 to +150
°C
Note :
REV. 1, Oct-2008, KTHC65
(1)
300us Pulse Width, 2% Duty Cycle.
(2)
Measured at 1.0MHz and applied reverse voltage of 4.0 VDC.
相关PDF资料 |
PDF描述 |
|---|---|
| MBR10100CT | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR10150CT | 5 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR10200CT | 5 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR10100CT | 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR10200F | 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR10100CT-LJ | 制造商:Diodes Incorporated 功能描述:DIODE SCHOTTKY 100V 5A TO220AB |
| MBR10100CT-M3/4W | 制造商:Vishay Semiconductors 功能描述:10A,100V,TRENCH SKY RECT. |
| MBR10100CTP | 功能描述:肖特基二极管与整流器 100V 10A RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR10100D | 制造商:SIRECT 制造商全称:Sirectifier Global Corp. 功能描述:Power Schottky Rectifier - 10Amp 100~200Volt |
| MBR10100DC | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:D2PAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |
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