参数资料
型号: MBR10H100-45
厂商: VISHAY SEMICONDUCTORS
元件分类: 参考电压二极管
英文描述: 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC
封装: PLASTIC PACKAGE-2
文件页数: 1/4页
文件大小: 130K
代理商: MBR10H100-45
MBR10H100, MBRF10H100 & MBRB10H100
Vishay Semiconductors
formerly General Semiconductor
Document Number 88667
www.vishay.com
01-Jul-02
1
New Product
High Voltage Schottky Rectifiers
Reverse Voltage 90 to 100V
Forward Current 10A
Maximum Junction Temperature 175
°C
Mechanical Data
Case: JEDEC TO-220AC, ITO-220AC & TO-263AB
molded plastic body
Terminals: Plated leads, solderable per
MIL-STD-750, Method 2026
High temperature soldering guaranteed:
250°C/10 seconds, 0.25" (6.35mm) from case
(TO-220AC & ITO-220AC) at terminals (TO-263AB)
Polarity: As marked Mounting Position: Any
Mounting Torque: 10 in-lbs maximum
Weight: 0.08 oz., 2.24 g
Packaging Codes: see next page
Features
Plastic package has Underwriters Laboratory
Flammability Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
Guardring for overvoltage protection
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
0.08
(2.032)
0.24
(6.096)
0.42
(10.66)
0.63
(17.02)
0.12
(3.05)
0.33
(8.38)
Mounting Pad Layout TO-263AB
0.380 (9.65)
0.411 (10.45)
0.320 (8.13)
0.360 (9.14)
0.591 (15.00)
0.624 (15.85)
1
2
0.245 (6.22)
MIN
K
0.027 (0.686)
0.037 (0.940)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
K
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.021 (0.53)
0.014 (0.36)
0.110 (2.79)
0.140 (3.56)
0.090 (2.29)
0.110 (2.79)
0.047 (1.19)
0.055 (1.40)
PIN 1
PIN 2
K - HEATSINK
0-0.01 (0-0.254)
0.060 (1.52)
0.405 (10.27)
0.383 (9.72)
0.191 (4.85)
0.171 (4.35)
0.600 (15.5)
0.580 (14.5)
0.560 (14.22)
0.530 (13.46)
0.037 (0.94)
0.027 (0.69)
0.140 (3.56)
0.130 (3.30)
0.350 (8.89)
0.330 (8.38)
0.188 (4.77)
0.172 (4.36)
0.110 (2.80)
0.100 (2.54)
0.131 (3.39)
0.122 (3.08)
0.110 (2.80)
0.100 (2.54)
0.022 (0.55)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
12
PIN
DIA.
PIN 1
PIN 2
0.676 (17.2)
0.646 (16.4)
ITO-220AC (MBRF10H90, MBRF10H100)
TO-220AC (MBR10H90, MBR10H100)
Dimensions in inches
and (millimeters)
TO-263AB (MBRB10H90, MBRB10H100)
0.154 (3.91)
0.148 (3.74)
DIA.
0.113 (2.87)
0.103 (2.62)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
0.160 (4.06)
0.140 (3.56)
0.037 (0.94)
0.027 (0.68)
0.205 (5.20)
0.195 (4.95)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.110 (2.79)
0.100 (2.54)
12
1.148 (29.16)
1.118 (28.40)
0.105 (2.67)
0.095 (2.41)
0.410 (10.41)
0.390 (9.91)
0.635 (16.13)
0.625 (15.87)
0.603 (15.32)
0.573 (14.55)
PIN
0.415 (10.54) MAX.
PIN 1
PIN 2
CASE
0.370 (9.40)
0.360 (9.14)
相关PDF资料
PDF描述
MA4E2501L-1290W SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE
MAP6KE130CATRE3 600 W, BIDIRECTIONAL, SILICON, TVS DIODE
MAP6KE150CAE3 600 W, BIDIRECTIONAL, SILICON, TVS DIODE
MAP6KE30CAE3TR 600 W, BIDIRECTIONAL, SILICON, TVS DIODE
MAP6KE43AE3 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE
相关代理商/技术参数
参数描述
MBR10H100CT 功能描述:肖特基二极管与整流器 10 Amp 100 Volt Dual RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBR10H100CT/45 功能描述:肖特基二极管与整流器 100 Volt 10A Dual 250 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBR10H100CT_10 制造商:TSC 制造商全称:Taiwan Semiconductor Company, Ltd 功能描述:10.0 AMPS. Schottky Barrier Rectifiers
MBR10H100CT_11 制造商:TSC 制造商全称:Taiwan Semiconductor Company, Ltd 功能描述:10.0AMPS. Schottky Barrier Rectifiers
MBR10H100CT-E3/45 功能描述:肖特基二极管与整流器 100 Volt 10A Dual 250 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel