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参数资料
| 型号： | MBR20030CT |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | 整流器 |
| 英文描述： | 100 A, 30 V, SILICON, RECTIFIER DIODE |
| 封装： | ROHS COMPLIANT PACKAGE-2 |
| 文件页数： | 1/2页 |
| 文件大小： | 117K |
| 代理商： | MBR20030CT |
ROHS Compliant
copper
Baseplate: Nickel plated
Baseplate
A=Common Anode
Baseplate
Common Cathode
Baseplate
D=Doubler
CPT20130 - CPT20145
Electrical Characteristics
*Pulse test: Pulse width 300sec, Duty cycle 2%
200 Amps
100 Amps
2000 Amps
2 Amps
0.68 Volts
0.64 Volts
4.0mA
5500pF
Thermal and Mechanical Characteristics
Schottky PowerMod
1100mA
Average forward current per pkg
Average forward current per leg
Maximum surge current per leg
Max peak forward voltage per leg
Max peak reverse current per leg
Typical junction capacitance
Maximum repetitive reverse current per leg
Storage temp range
Operating junction temp range
Max thermal resistance per leg
Typical thermal resistance (greased)
Terminal Torque
Mounting Base Torque (outside holes)
Weight
center hole must be torqued first
Mounting Base Torque (center hole)
OJC
OCS
STG
R
TJ
T
CJ
F(AV)
FSM
RM
R(OV)
I
FM
V
I
FM
V
I
F(AV)
I
H
Q
40V
35V
30V
45V
Working Peak
Reverse Voltage
*Add Suffix A for Common Anode, D for Doubler
CPT20140*
CPT20135*
CPT20130*
CPT20145*
Microsemi
Catalog Number
V
U
N
W
F
Reverse Voltage
Repetitive Peak
E
40V
35V
30V
45V
Notes:
U
C
B
G
R
A
C = 99°C, Square wave,
0JC = .40°C/W
C = 99°C, Square wave,
0JC = .20°C/W
30-40 inch pounds
2.8 ounces (75 grams) typical
8-10 inch pounds
T
8.3ms, half sine,
J = 125°C
f = 1 KHZ, 25°C
FM = 200A:
J = 25°C*
FM = 200A:
J = 125°C*
RRM,
J = 125°C*
RRM,
J = 25°C
R = 5.0V,
C = 25°C
35-50 inch pounds
-55°C to 150°C
Junction to case
Case to sink
0.40°C/W
0.08°C/W
V
T
V
I
T
R
1/4-28
Dia.
Notes
92.20
A
3.630
---
3.150 BSC
---
0.510
0.130
0.800
0.630
---
0.290
0.340
0.195
200 Amperes/30 to 45 Volts
Schottky Barrier Rectifier
Guard Ring Protection
Reverse Energy Tested
150° C Junction Temperature
0.312
0.180
0.600
V
W
U
---
0.275
Q
R
N
1.375 BSC
E 0.120
0.010
0.490
G
H
F
---
0.700
C
B
80.01 BSC
34.92 BSC
---
15.24
7.92
4.57
6.99
12.45
3.05
---
17.78
0.25
---
7.37
8.64
4.95
12.95
3.30
20.32
16.00
---
Dim. Inches
Max.
---
Min.
Millimeters
---
Min.
Max.
Part Number
MBR20030CT
200CNQ035
Industry
224CNQ035
MBR20035CT
200CNQ040
224CNQ040
MBR20040CT
200CNQ045
224CNQ045
MBR20045CT
January, 2010 - Rev. 4
www.microsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| MBR20100CTW | 20 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR20120CE | 20 A, 120 V, SILICON, RECTIFIER DIODE, TO-262AA |
| MBR20120CT-1 | 10 A, SILICON, RECTIFIER DIODE, TO-262AA |
| MBR20120CT-G | 10 A, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR20150CT | 20 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR20030CTR | 功能描述:肖特基二极管与整流器 30V 200A Schottky Recovery RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR20030R | 制造商:TRSYS 制造商全称:Transys Electronics 功能描述:SCHOTTKY DIODES MODULE TYPE 200A |
| MBR20035 | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:200 Amp Rectifier 20 to 100 Volts Schottky Barrier |
| MBR20035CT | 功能描述:肖特基二极管与整流器 35V 200A Schottky Recovery RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR20035CTR | 功能描述:肖特基二极管与整流器 35V 200A Schottky Recovery RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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