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参数资料
| 型号： | MBR20H150CTG |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 110K |
| 描述： | DIODE SCHTTKY DUAL H-SER TO220AB |
| 标准包装： | 50 |
| 系列： | SWITCHMODE™ |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 680mV @ 10A |
| 电流 - 在 Vr 时反向漏电： | 50µA @ 150V |
| 电流 - 平均整流 (Io)（每个二极管）： | 10A |
| 电压 - (Vr)（最大）： | 150V |
| 二极管类型： | 肖特基 |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 二极管配置： | 1 对共阴极 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 其它名称： | MBR20H150CTG-ND MBR20H150CTGOS |
MBRF20H150CTG, MBR20H150CTG
http://onsemi.com
2
MAXIMUM RATINGS
(Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
RWM
VR
150
V
Average Rectified Forward Current (Per Leg)
(Rated VR) TC
= 134
°C (Per Device)
IF(AV)
10
20
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
180
A
Operating Junction Temperature (Note 1)
TJ
?20 to +150
°C
Storage Temperature
Tstg
?65 to +150
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/s
ESD Ratings: Machine Model = C
Human Body Model = 3B
> 400
> 8000
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction?to?Ambient: dPD/dTJ
< 1/R
JA.
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Maximum Thermal Resistance
(MBR20H150CT)
?
Junction
?to?Case
?
Junction
?to?Ambient
(MBRF20H150CT)
?
Junction
?to?Case
RJC
RJA
RJC
2.0
45
2.5
°C/W
ELECTRICAL CHARACTERISTICS
(Per Diode Leg)
Rating
Symbol
Typ
Max
Unit
Maximum Instantaneous Forward Voltage (Note 2)
(IF
= 5 A, T
C
= 25
°C)
(IF
= 5 A, T
C
= 125
°C)
(IF
= 10 A, T
C
= 25
°C)
(IF
= 10 A, T
C
= 125
°C)
vF
0.72
0.57
0.87
0.65
0.60
0.68
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC
= 25
°C)
(Rated DC Voltage, TC
= 125
°C)
iR
50
30
A
mA
2. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤
2.0%.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR20H150CTH | 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: |
| MBR20H150FCT | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:Schottky Barrier Rectifiers |
| MBR20H200CT | 功能描述:肖特基二极管与整流器 20 Amp 200 Volt Dual RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR20H200CT/45 | 功能描述:肖特基二极管与整流器 20 Amp 200 Volt Dual Common Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR20H200CT_07 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Common-Cathode High-Voltage Schottky Rectifier |
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