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参数资料
| 型号： | MBR20H90CTGHE3/45 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 398K |
| 代理商： | MBR20H90CTGHE3/45 |
MBR20H90CTG & MBR20H100CTG
Vishay General Semiconductor
Document Number: 88856
Revision: 25-Mar-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode High-Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
High frequency operation
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching
mode power supplies, freewheeling diodes, dc-to-dc
converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
10 A x 2
VRRM
90 V, 100 V
IFSM
150 A
VF
0.70 V
IR
3.5 A
TJ max.
175 °C
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
MBR20H90CTG
MBR20H100CTG
1
2
3
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR20H90CTG
MBR20H100CTG
UNIT
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current at TC = 155 °C
total device
per diode
IF(AV)
20
10
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
150
A
Peak repetitive reverse current per diode at tp = 2 s, 1 kHz
IRRM
0.5
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/s
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR20H90CTHE3/45 | 功能描述:肖特基二极管与整流器 20 Amp 90 Volt Dual Common Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR20HL100CT | 制造商:SIRECT 制造商全称:Sirectifier Global Corp. 功能描述:Power Schottky Rectifier - 20Amp 100Volt |
| MBR20HXX | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Schottky Barrier Rectifier |
| MBR20HXXCT | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Schottky Barrier Rectifier |
| MBR20L100CT | 功能描述:肖特基二极管与整流器 20A,100V,DUAL SCHOTTKY Rect LOW VF RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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