- 您现在的位置：买卖IC网 > PDF目录133517 > MBR20H90CTGHE3/45 (VISHAY SEMICONDUCTORS) 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB PDF资料下载
参数资料
| 型号： | MBR20H90CTGHE3/45 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 2/4页 |
| 文件大小： | 398K |
| 代理商： | MBR20H90CTGHE3/45 |
MBR20H90CTG & MBR20H100CTG
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88856
Revision: 25-Mar-08
2
Note:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Maximum instantaneous forward voltage per diode (1)
IF = 10 A
IF = 20 A
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VF
0.80
0.64
0.87
0.74
0.85
0.70
0.93
0.80
V
Maximum reverse current per diode at working peak
reverse voltage (1)
TJ = 25 °C
TJ = 125 °C
IR
-
3.5
4.5
A
mA
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR
UNIT
Typical thermal resistance per diode
RθJC
2.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (G)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
MBR20H100CTG-E3/45
1.85
45
50/tube
Tube
TO-220AB
MBR20H100CTGHE3/45 (1)
1.85
45
50/tube
Tube
Figure 1. Forward Derating Curve
0
4
8
12
16
20
24
75
50
25
0
100
125
150
175
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
Case Temperature (°C)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
1
10
100
50
25
75
100
125
150
175
T
J = TJ Max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
P
eak
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
相关PDF资料 |
PDF描述 |
|---|---|
| MMSZ5243BW | 13 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| MA30KPA144CATR | 30000 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| MA30KPA168CATR | 30000 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| MA30KPA198CA | 30000 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| MA30KPA51ATR | 30000 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR20H90CTHE3/45 | 功能描述:肖特基二极管与整流器 20 Amp 90 Volt Dual Common Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR20HL100CT | 制造商:SIRECT 制造商全称:Sirectifier Global Corp. 功能描述:Power Schottky Rectifier - 20Amp 100Volt |
| MBR20HXX | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Schottky Barrier Rectifier |
| MBR20HXXCT | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Schottky Barrier Rectifier |
| MBR20L100CT | 功能描述:肖特基二极管与整流器 20A,100V,DUAL SCHOTTKY Rect LOW VF RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。