- 您现在的位置：买卖IC网 > PDF目录133517 > MBR20H90CTGHE3/45 (VISHAY SEMICONDUCTORS) 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB PDF资料下载
参数资料
| 型号： | MBR20H90CTGHE3/45 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 3/4页 |
| 文件大小： | 398K |
| 代理商： | MBR20H90CTGHE3/45 |
MBR20H90CTG & MBR20H100CTG
Vishay General Semiconductor
Document Number: 88856
Revision: 25-Mar-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Characteristics Per Diode
0.1
0.3
1.1
0.5
100
10
0.1
0.01
1
0.7
0.9
T
J = 100 °C
T
J = 150 °C
T
J = 125 °C
T
J = 175 °C
T
J = 25 °C
T
J = - 40 °C
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
1
0.1
10
100
10 000
0.01
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
C
u
rrent
(
A)
1000
T
J = 100 °C
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
Figure 5. Typical Junction Capacitance Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
10
1
100
1000
0.1
10
Reverse Voltage (V)
J
u
nction
Capacitance
(pF)
0.01
10
1
100
10
0.1
1
t - Pulse Duration (s)
T
ransient
Ther
mal
Impedance
(°C/
W
)
100
0.1
TO-220AB
0.113 (2.87)
0.103 (2.62)
0.370 (9.40)
0.360 (9.14)
0.415 (10.54) MAX.
0.635 (16.13)
0.625 (15.87)
PIN
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
0.205 (5.20)
0.195 (4.95)
0.035 (0.90)
0.028 (0.70)
0.154 (3.91)
0.148 (3.74)
1
3
2
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.110 (2.79)
0.100 (2.54)
0.603 (15.32)
0.573 (14.55)
相关PDF资料 |
PDF描述 |
|---|---|
| MMSZ5243BW | 13 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| MA30KPA144CATR | 30000 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| MA30KPA168CATR | 30000 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| MA30KPA198CA | 30000 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| MA30KPA51ATR | 30000 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR20H90CTHE3/45 | 功能描述:肖特基二极管与整流器 20 Amp 90 Volt Dual Common Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR20HL100CT | 制造商:SIRECT 制造商全称:Sirectifier Global Corp. 功能描述:Power Schottky Rectifier - 20Amp 100Volt |
| MBR20HXX | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Schottky Barrier Rectifier |
| MBR20HXXCT | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Schottky Barrier Rectifier |
| MBR20L100CT | 功能描述:肖特基二极管与整流器 20A,100V,DUAL SCHOTTKY Rect LOW VF RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。