参数资料
型号: MBR350TRPBF
厂商: VISHAY INTERTECHNOLOGY INC
元件分类: 整流器
英文描述: 3 A, 50 V, SILICON, RECTIFIER DIODE
封装: ROHS COMPLIANT, PLASTIC, C-16, 2 PIN
文件页数: 1/5页
文件大小: 61K
代理商: MBR350TRPBF
Document Number: 93450
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 06-Nov-08
1
Schottky Rectifier, 3 A
MBR350, MBR360
Vishay High Power Products
FEATURES
Low profile, axial leaded outline
Very low forward voltage drop
High frequency operation
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Guard ring for enhanced ruggedness and long term
reliability
Lead (Pb)-free plating
Designed and qualified for industrial level
DESCRIPTION
The MBR350, MBR360 axial leaded Schottky rectifier has
been optimized for very low forward voltage drop, with
moderate leakage. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRODUCT SUMMARY
IF(AV)
3 A
VR
50/60 V
VF at 3 A at 25 °C
0.73 V
IRM
15 mA at 125 °C
C-16
Cathode
Anode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
UNITS
IF(AV)
Rectangular waveform
3.0
A
VRRM
50/60
V
IFSM
tp = 5 s sine
460
A
VF
3 Apk, TJ = 25 °C
0.73
V
TJ
- 40 to 150
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
MBR350
MBR360
UNITS
Maximum DC reverse voltage
VR
50
60
V
Maximum working peak reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward current
See fig. 4
IF(AV)
50 % duty cycle at TL = 50 °C, rectangular waveform
3.0
A
Maximum peak one cycle
non-repetitive surge current
See fig. 6
IFSM
5 s sine or 3 s rect. pulse
Following any rated load
condition and with rated
VRRM applied
460
10 ms sine or 6 ms rect. pulse
80
Non-repetitive avalanche energy
EAS
TJ = 25 °C, IAS = 1 A, L = 10 mH
5.0
mJ
Repetitive avalanche current
IAR
Current decaying linearly to zero in 1 s
Frequency limited by, TJ maximum VA = 1.5 x VR typical
1.0
A
相关PDF资料
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MBR360RL 3 A, 60 V, SILICON, RECTIFIER DIODE
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