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参数资料
| 型号： | MBR350TRPBF |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 整流器 |
| 英文描述： | 3 A, 50 V, SILICON, RECTIFIER DIODE |
| 封装： | ROHS COMPLIANT, PLASTIC, C-16, 2 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 61K |
| 代理商： | MBR350TRPBF |
www.vishay.com
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93450
2
Revision: 06-Nov-08
MBR350, MBR360
Vishay High Power Products
Schottky Rectifier, 3 A
Note
(1) Pulse width < 300 s, duty cycle < 2 %
Notes
(1)
thermal runaway condition for a diode on its own heatsink
(2) Mounted 1" square PCB, thermal probe connected to lead 2 mm from package
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum forward voltage drop
See fig. 1
VFM (1)
1.0 A
TJ = 25 °C
0.58
V
3.0 A
0.73
9.4 A
1.06
1.0 A
TJ = 125 °C
0.49
3.0 A
0.64
9.4 A
0.89
Maximum reverse leakage current
See fig. 2
IRM (1)
TJ = 25 °C
VR = Rated VR
0.6
mA
TJ = 100 °C
8
TJ = 125 °C
15
Typical junction capacitance
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
190
pF
Typical series inductance
LS
Measured lead to lead 5 mm from package body
9.0
nH
Maximum voltage rate of change
dV/dt
Rated VR
10 000
V/s
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ (1), TStg
- 40 to 150
°C
Maximum thermal resistance,
junction to lead
RthJL (2)
DC operation
See fig. 4
30
°C/W
Approximate weight
1.2
g
0.042
oz.
Marking device
Case style C-16
MBR350
MBR360
dP
tot
dT
J
-------------
1
R
thJA
--------------
<
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