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参数资料
| 型号： | MBR41H100CTG |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/9页 |
| 文件大小： | 124K |
| 描述： | DIODE SCHOTTKY 20A 100V TO-220AB |
| 标准包装： | 50 |
| 系列： | SWITCHMODE™ |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 800mV @ 20A |
| 电流 - 在 Vr 时反向漏电： | 10µA @ 100V |
| 电流 - 平均整流 (Io)（每个二极管）： | 20A |
| 电压 - (Vr)（最大）： | 100V |
| 二极管类型： | 肖特基 |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 二极管配置： | 1 对共阴极 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 其它名称： | MBR41H100CTG-ND MBR41H100CTGOS |
MBR41H100CT, NRVBB41H100CT Series
http://onsemi.com
2
MAXIMUM RATINGS
(Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
RWM
VR
100
V
Average Rectified Forward Current
(Rated VR) TC
= 150
°C
IF(AV)
20
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC
= 145
°C
IFRM
40
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
350
A
Operating Junction Temperature (Note 1)
TJ
+175
°C
Storage Temperature
Tstg
65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/s
Controlled Avalanche Energy (see test conditions in Figures 10 and 11)
WAVAL
400
mJ
ESD Ratings:
Machine Model = C
Human Body Model = 3B
> 400
> 8000
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS (Per Diode Leg)
Characteristic
Symbol
Value
Unit
Maximum Thermal Resistance
Junction?to?Case
Junction?to?Ambient
RJC
RJA
2.0
70
°C/W
ELECTRICAL CHARACTERISTICS
(Per Diode Leg)
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 2)
(IF
= 20 A, T
C
= 25
°C)
(IF
= 20 A, T
C
= 125
°C)
(IF
= 40 A, T
C
= 25
°C)
(IF
= 40 A, T
C
= 125
°C)
vF
0.80
0.67
0.90
0.76
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC
= 125
°C)
(Rated DC Voltage, TC
= 25
°C)
iR
10
0.01
mA
1. The heat generated must be less than the thermal conductivity from Junction?to?Ambient: dPD/dTJ
< 1/R
JA.
2. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤
2.0%.
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