- 您现在的位置：买卖IC网 > PDF目录39592 > MBR760-E3 (VISHAY SEMICONDUCTORS) 7.5 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC PDF资料下载
参数资料
| 型号： | MBR760-E3 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 7.5 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 3/3页 |
| 文件大小： | 64K |
| 代理商： | MBR760-E3 |
MBR7xx, MBRF7xx & MBRB7xx Series
Vishay Semiconductors
formerly General Semiconductor
Document Number 88680
www.vishay.com
03-Mar-03
3
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Case Temperature (
°C)
Fig. 1 – Forward Current
Derating Curve
A
verage
Forward
Current
(A)
Fig. 3 – Typical Instantaneous
Forward Characteristics
Instantaneous Forward Voltage (V)
Instantaneous
Forward
Current
(A)
Percent of Rated Peak Reverse Voltage (%)
Instantaneous
Reverse
Current
(mA)
Fig. 4 – Typical Reverse
Characteristics
Fig. 6 – Typical Transient Thermal
Impedance
1
10
100
50
25
75
100
125
150
175
Number of Cycles at 60 HZ
t, Pulse Duration (sec.)
Fig. 2 – Maximum Non-Repetitive
Peak Forward Surge Current
Peak
Forward
Surge
Current
(A)
TJ = TJ max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
0.01
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0
1
10
50
TJ = 125
°C
TJ = 25
°C
Pulse Width = 300
s
1% Duty Cycle
0
20
40
60
80
100
0.001
0.01
0.1
1
10
50
MBR735 - MBR745
MBR750 & MBR760
TJ = 25
°C
TJ = 75
°C
TJ = 125
°C
0.1
1
10
100
40
100
1,000
4,000
Reverse Voltage (V)
Junction
Capacitance
(pF)
T
ransient
Thermal
Impedance
(
°CW)
Fig. 5 – Typical Junction
Capacitance
TJ = 25°C
f = 1.0MHZ
Vsig = 50MVp-p
0.01
0.1
1
10
100
0.1
1
10
100
0
50
100
150
0
2
4
6
8
10
Resistive or Inductive Load
MBR735 - MBR745
MBR750 & MBR760
MBR735 - MBR745
MBR750 & MBR760
MBR735 - MBR745
MBR750 & MBR760
相关PDF资料 |
PDF描述 |
|---|---|
| MBR735 | 7.5 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBRF735 | 7.5 A, 35 V, SILICON, RECTIFIER DIODE |
| MBRF8100 | 8 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBRI30100CT | 15 A, 100 V, SILICON, RECTIFIER DIODE |
| MBRM140ET3G | 1 A, 40 V, SILICON, SIGNAL DIODE, DO-216AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR760-E3/45 | 功能描述:肖特基二极管与整流器 7.5Amp 60Volt Single RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR760-E3-45 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Barrier Rectifier |
| MBR760HE3/45 | 功能描述:肖特基二极管与整流器 60 Volt 7.5A Single 150 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR790 | 功能描述:肖特基二极管与整流器 7.0 Amp 90 Volt Single RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR7H35 | 制造商:VAISH 制造商全称:VAISH 功能描述:Schottky Barrier Rectifiers |
发布紧急采购，3分钟左右您将得到回复。